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參數(shù)資料
| 型號： | FDLL916 |
| 英文描述： | High Conductance Fast Diode(40.03 k) |
| 中文描述： | 高電導快速二極管（40.03十一） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | FDLL916 |
1
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
B
V
Breakdown Voltage
I
R
= 100
μ
A
I
R
= 5.0
μ
A
V
R
= 20 V
V
R
= 20 V, T
A
= 150
°
C
V
R
= 75 V
I
F
= 5.0 mA
I
F
= 5.0 mA
I
F
= 10 mA
I
F
= 20 mA
I
F
= 30 mA
I
F
= 100 mA
100
75
V
V
nA
μ
A
μ
A
mV
mV
V
V
V
V
I
R
Reverse Current
25
50
5.0
720
730
1.0
1.0
1.0
1.0
V
F
Forward Voltage
1N914B / 4448
1N916B
1N914 / 916 / 4148
1N914A / 916A
1N916B
1N914B / 4448
620
630
C
O
Diode Capacitance
1N916/A/B / 4448
1N914/A/B / 4148
V
R
= 0, f
= 1.0 MHz
V
R
= 0, f
= 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V (60 mA),
I
rr
= 1.0 mA, R
L
= 100
2.0
4.0
4.0
pF
pF
nS
T
RR
Reverse Recovery Time
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
160
V
1
2
3
5
10
20
30
50
100
110
120
130
140
150
I - REVERSE CURRENT (uA)
R
V
R
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
120
Ta= 25°C
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
10
20
30
50
70
100
0
20
40
60
80
100
V - REVERSE VOLTAGE (V)
I
R
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
550
V
1
2
3
5
10
20
30
50
100
250
300
350
400
450
500
I - FORWARD CURRENT (uA)
F
Ta= 25°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 100 mA
750
V
0.1
0.2 0.3
0.5
1
2
3
5
10
450
500
550
600
650
700
I - FORWARD CURRENT (mA)
F
Ta= 25°C
High Conductance Fast Diode
(continued)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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| FDM | 制造商:Renesas Electronics Corporation 功能描述:Dev In System Flash Programmer 制造商:Renesas Electronics Corporation 功能描述:FLASH DEVELOPMENT BOARD - Boxed Product (Development Kits) |
| FDM-02PDSR | 制造商:FUJIKURA 制造商全稱:FUJIKURA 功能描述:Sensing element / Differential |
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