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參數(shù)資料
| 型號(hào)： | FDD6N50F |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
| 中文描述： | N溝道MOSFET的500V，5.5A，1.15ヘ |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 324K |
| 代理商： | FDD6N50F |
F
FDD6N50F / FDU6N50F Rev. A
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
and Temperature
2.4
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
Figure 5. Capacitance Characteristics
1500
C
iss
= C
gs
+ C
gd
(
C
ds
= shorted
)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
10
0.1
1
10
0.1
1
10
20
0.04
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
=
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,
V
DS
,Drain-Source Voltage[V]
28
5
6
7
8
9
10
1
10
150
o
C
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
25
o
C
I
D
,
V
GS
,Gate-Source Voltage[V]
20
0.0
0.5
1.0
1.5
2.0
0.1
1
10
100
*Notes:
1. V
GS
= 0V
2. 250
μ
s Pulse Test
150
o
C
I
S
,
V
SD
, Body Diode Forward Voltage [V]
25
o
C
0
4
8
12
16
0.6
1.2
1.8
*Note: T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
D
[
Ω
]
,
D
I
D
, Drain Current [A]
0.1
1
10
0
300
600
900
1200
C
oss
C
iss
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
C
V
DS
, Drain-Source Voltage [V]
30
0
4
8
12
16
0
2
4
6
8
*Note: I
D
= 6A
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
V
G
,
Q
g
, Total Gate Charge [nC]
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|---|---|
| FDD6N50FTF | 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6N50FTM | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6N50RTF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD6N50TF | 功能描述:MOSFET 500V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6N50TF_WS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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