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參數資料
| 型號： | FD400J2V |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc |
| 中文描述： | 繼電器HERMETIQUE 2逆轉錄雙重間斷期10 A/56嚇 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 110K |
| 代理商： | FD400J2V |
Technische Information / Technical Information
FD 400 R 33 KF2
IGBT-Module
IGBT-Modules
Datenblatt
data sheet
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
T
j
= 25°C
T
j
= -25°C
V
CES
3300
3300
V
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80°C
T
C
= 25 °C
I
C,nom.
400
A
I
C
660
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C
I
CRM
800
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor
P
tot
4,8
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
400
A
Periodischer Spitzenstrom
repetitive peak forw. Current
t
P
= 1 ms
I
FRM
800
A
Grenzlastintegral der Diode
I2t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
A
2
s
Spitzenverlustleistung der Diode
maximum power dissipation diode
T
j
= 125°C
P
RQM
400
kW
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
6.000
V
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, Q
PD
≤
10 pC (acc. to IEC 1287)
V
ISOL
2.600
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 400 A, V
GE
= 15V, Tvj = 25°C
V
CE sat
-
3,40
4,25
V
I
C
= 400 A, V
GE
= 15V, T
vj
= 125°C
-
4,30
5,00
V
Gate-Schwellenspannung
gate threshold voltage
I
C
= 40 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
4,2
5,1
6,0
V
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
50
-
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
2,7
-
nF
Gateladung
gate charge
V
GE
= -15V ... + 15V, V
CE
= 1800V
Q
G
-
8
-
μC
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 3300V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
0,05
4
mA
V
CE
= 3300V, V
GE
= 0V, T
vj
= 125°C
-
20
50
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: Jürgen Gttert
date of publication : 08.06.99
approved by: Chr. Lübke: 04.10.99
revision: 2
55.600
1 (9)
Datenblatt FD 400 R 33 KF2
04.10.99
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