• 參數(shù)資料
    型號： FCU7N60
    廠商： FAIRCHILD SEMICONDUCTOR CORP
    元件分類： JFETs
    英文描述： 600V N-Channel MOSFET
    中文描述： 7 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
    封裝： IPAK-3
    文件頁數(shù)： 1/9頁
    文件大?。?/td> 974K
    代理商： FCU7N60
    2006 Fairchild Semiconductor Corporation
    FCD7N60/FCU7N60 Rev. A0
    1
    www.fairchildsemi.com
    F
    SuperFET
    TM
    July 2006
    FCD7N60 / FCU7N60
    600V N-Channel MOSFET
    Features
    650V @T
    J
    = 150°C
    Typ. Rds(on)=0.53
    Ultra low gate charge (typ. Qg=23nC)
    Low effective output capacitance (typ. Coss.eff=60pF)
    100% avalanche tested
    Description
    SuperFET
    TM
    is, Farichild’s proprietary, new generation of high
    voltage MOSFET family that is utilizing an advanced charge
    balance mechanism for outstanding low on-resistance and
    lower gate charge performance.
    This advanced technology has been tailored to minimize
    conduction loss, provide superior switching performance, and
    withstand extreme dv/dt rate and higher avalanche energy.
    Consequently, SuperFET is very suitable for various AC/DC
    power conversion in switching mode operation for system
    miniaturization and higher efficiency.
    D-PAK
    FCD Series
    G
    S
    D
    G
    S
    D
    I-PAK
    FCU Series
    D
    G
    S
    Absolute Maximum Ratings
    Symbol
    Parameter
    FCD7N60/FCU7N60
    Unit
    V
    DSS
    I
    D
    Drain-Source Voltage
    600
    V
    Drain Current
    - Continuous (T
    C
    = 25
    °
    C)
    - Continuous (T
    C
    = 100
    °
    C)
    - Pulsed
    7
    4.4
    A
    A
    I
    DM
    Drain Current
    (Note 1)
    21
    A
    V
    GSS
    E
    AS
    I
    AR
    E
    AR
    dv/dt
    Gate-Source voltage
    ±
    30
    V
    Single Pulsed Avalanche Energy
    (Note 2)
    230
    mJ
    Avalanche Current
    (Note 1)
    7
    A
    Repetitive Avalanche Energy
    (Note 1)
    8.3
    mJ
    Peak Diode Recovery dv/dt
    (Note 3)
    20
    V/ns
    P
    D
    Power Dissipation
    (T
    C
    = 25
    °
    C)
    - Derate above 25
    °
    C
    83
    0.67
    W
    W/
    °
    C
    T
    J,
    T
    STG
    T
    L
    Operating and Storage Temperature Range
    -55 to +150
    °
    C
    Maximum Lead Temperature for Soldering Purpose,
    1/8” from Case for 5 Seconds
    300
    °
    C
    Thermal Characteristics
    Symbol
    Parameter
    FCD7N60/FCU7N60
    Unit
    R
    θ
    JC
    R
    θ
    JA
    Thermal Resistance, Junction-to-Case
    1.5
    °
    C/W
    Thermal Resistance, Junction-to-Ambient
    83
    °
    C/W
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