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參數(shù)資料
| 型號： | F49B002UA-70D |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 英文描述： | 2 Mbit (256K x 8) 5V Only CMOS Flash Memory |
| 中文描述： | 2兆位（256K × 8）5V的只有閃存的CMOS |
| 文件頁數(shù)： | 10/33頁 |
| 文件大小： | 335K |
| 代理商： | F49B002UA-70D |
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EFS T
F49B002UA
7.4 More Device Operations
Hardware Data Protection
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.4 10/33
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes. In addition, the following
hardware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during V
CC
power-up and power-down transitions, or from system
noise.
Low V
CC
Write Inhibit
When V
CC
is less than VLKO, the device does not
accept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent
unintentional writes when V
CC
is greater than V
LKO
.
Write Pulse "Glitch" Protection
Noise pulses of less than 15 ns (typical) on
CE
or
WE
do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of
OE
=
V
IL
,
CE
= V
IH
or
WE
= V
IH
. To initiate a write cycle,
CE
and
WE
must be a logical zero while
OE
is a
logical one.
Power Supply Decoupling
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected
between
its V
CC
and GND.
Power-Up Sequence
The device powers up in the Read Mode. In addition,
the memory contents may only be altered after
successful completion of the predefined command
sequences.
Power-Up Write Inhibit
If
WE
=
CE
= V
IL
and
OE
= V
IH
during power up,
the device does not accept commands on the rising
edge of
WE
. The internal state machine is
automatically reset to reading array data on power-up.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| F49B002UA-70N | 2 Mbit (256K x 8) 5V Only CMOS Flash Memory |
| F49L004BA-70N | 4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-70T | 4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-90N | 4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-90T | 4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F49B002UA-70N | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2 Mbit (256K x 8) 5V Only CMOS Flash Memory |
| F49L004BA | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-70N | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-70T | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
| F49L004BA-90N | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4 Mbit (512K x 8) 3V Only CMOS Flash Memory |
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