參數資料
型號: F28F010-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 1024K (128K x 8) CMOS FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
封裝: 0.310 X 0.720 INCH, REVERSE, TSOP-32
文件頁數: 11/30頁
文件大?。?/td> 405K
代理商: F28F010-150
28F010
290207–5
Bus
Command
Comments
Operation
Standby
Wait for V
PP
Ramp to V
PPH
(1)
Initialize Pulse-Count
Write
Set-up
Program
Data
e
40H
Write
Program
Valid Address/Data
Standby
Duration of Program
Operation (t
WHWH1
)
Write
Program
(2)
Verify
Data
e
C0H; Stops Program
Operation
(3)
Standby
t
WHGL
Read
Read Byte to Verify
Programming
Standby
Compare Data Output to Data
Expected
Write
Read
Data
e
00H, Resets the
Register for Read Operations
Standby
Wait for V
PP
Ramp to V
PPL
(1)
NOTES:
1. See DC Characteristics for the value of V
PPH
and
V
PPL
.
2. Program Verify is only performed after byte program-
ming. A final read/compare may be performed (option-
al) after the register is written with the Read command.
3. Refer to principles of operation.
4. CAUTION: The algorithm MUST BE FOLLOWED
to ensure proper and reliable operation of the de-
vice.
Figure 5. 28F010 Quick Pulse Programming Algorithm
11
相關PDF資料
PDF描述
F28F010-65 1024K (128K x 8) CMOS FLASH MEMORY
F292CNS-T1052Z Variable Coils
F292CNS-T1053Z Variable Coils
F292CNS-T1054Z Variable Coils
F292CNS-T1055Z Variable Coils
相關代理商/技術參數
參數描述
F28F010-65 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1024K (128K x 8) CMOS FLASH MEMORY
F28F010-90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1024K (128K x 8) CMOS FLASH MEMORY
F28F020150 制造商:Rochester Electronics LLC 功能描述:- Bulk
F28F020-200 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
F28H19S-10-050-5 制造商:TEMP-FLEX 功能描述: