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參數(shù)資料
| 型號： | F25L004A-100PAG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 512K X 8 FLASH 3V PROM, PDSO8 |
| 封裝： | 0.200 INCH, ROHS COMPLIANT, SOIC-8 |
| 文件頁數(shù)： | 10/32頁 |
| 文件大?。?/td> | 393K |
| 代理商： | F25L004A-100PAG |
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ES MT
bottom memory type ; third byte 13H as memory capacity.
11. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other.
The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both instructions
effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR can reset WREN.
Read (33 MHz)
The Read instruction supports up to 33 MHz, it outputs the data
starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a
low to high transition on CE . The internal address pointer will
automatically increment until the highest memory address is
reached. Once the highest memory address is reached, the
address pointer will automatically increment to the beginning
F25L004A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
10/32
Publication Date
:
Apr. 2007
(wrap-around) of the address space, i.e. for 4Mbit density, once
the data from address location 7FFFFH had been read, the next
output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command,
03H, followed by address bits [A
23
-A
0
]. CE must remain active
low for the duration of the Read cycle. See Figure 2 for the Read
sequence.
Figure 2 : READ SEQUENCE
CE
SCK
SI
1 2 3 4 5 6 7 8
15 16
2324
31 32
39 40
4748
55 56
63 64
70
N+4
D
OUT
N+3
D
OUT
N+2
D
OUT
N+1
D
OUT
N
D
OUT
MSB
MSB
MSB
HIGH IMPENANCE
SO
03
MODE3
MODE1
ADD.
ADD.
ADD.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| F25L004A-100PG | 4 Mbit Uniform Sector, Serial Flash Memory |
| F25L004A-50DG | 4 Mbit Uniform Sector, Serial Flash Memory |
| F25L004A-50PAG | 4 Mbit Uniform Sector, Serial Flash Memory |
| HL1A100KR | ALUMINIUM ELECTROLYTIC CAPACITOR |
| HL1A100KT | ALUMINIUM ELECTROLYTIC CAPACITOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F25L004A-100PAIG | 制造商:ELITE SEMICONDUCTOR 功能描述:FLASH 4MB 3V SPI 100MHZ SOIC8 |
| F25L004A-100PG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory |
| F25L004A-100PIG | 制造商:ELITE SEMICONDUCTOR 功能描述:FLASH 4MB 3V SPI 100MHZ SOIC8 |
| F25L004A-50DG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:4Mbit (512Kx8) 3V Only Serial Flash Memory |
| F25L004A-50DIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40°C ~85°C |
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