參數(shù)資料
型號(hào)： F2049
廠商： Polyfet RF Devices
英文描述： PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述： 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 35K
代理商： F2049
RF CHARACTERISTICS ( WATTS OUTPUT )
7.5
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
7.5Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
40Watts
5
C
o
200
-65
to 150
2.4 A
30V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
dB
%
Relative
10
45
0.6
20:1
Idq =
Idq =
Idq =
0.6
0.6
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 1000 MHz
F = 1000 MHz
F = 1000 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
65
0.6
1
7
1
0.6
1.4
3.6
27
3
18
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.03
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.06
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 3
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
C
o
C
o
C/W
o
F2049
polyfet rf devices
8/1/97
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F-2049-0001 制造商:Dantona Industries 功能描述:NICKEL CADMIUM BATTERY, 3.6V, 1.4AH; Battery Size Code:-; Battery Capacity:1.4Ah; Battery Voltage:3.6V; Battery Technology:Nickel Cadmium; External Diameter:17.5mm; External Height:147.9mm; Battery Terminals:Pressure Contact ;RoHS Compliant: NA
F20493A 制造商:Thomas & Betts 功能描述:30A,ILK,3P4W,250V
F204-A-40/300MA 制造商:ABB Low Voltage Products and Systems 功能描述:RCD for PV 4 pole 40A 300mA
F204-A-63/300MA 制造商:ABB Low Voltage Products and Systems 功能描述:RCD for PV 4 pole 63A 300mA
F204AC-100/0.03 制造商:ABB Low Voltage Products and Systems 功能描述:Circuit Breaker, GFEP Ground Falut Equipment Protector, 4 Pole, AC, 100A, 30mA 制造商:ABB Low Voltage Products and Systems 功能描述:4 pole RCCB,100A 30mA sensitivity 制造商:ABB Low Voltage Products and Systems 功能描述:RCD 4P 100A 30MA
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