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參數(shù)資料
| 型號： | F100322DMQR |
| 英文描述： | Nine Bit Buffer |
| 中文描述： | 九位緩沖 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 104K |
| 代理商： | F100322DMQR |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired.
Storage Temperature (T
STG
)
Maximum Junction Temperature (T
J
)
Ceramic
V
EE
Pin Potential to Ground Pin
Input Voltage (DC)
Output Current (DC Output HIGH)
65C to +150C
+175C
7.0V to +0.5V
V
EE
to +0.5V
50 mA
ESD (Note 2)
≥
2000V
Recommended Operating
Conditions
Case Temperature (T
C
)
Military
Supply Voltage (V
EE
)
Note 1:
Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2:
ESD testing conforms to MIL-STD-883, Method 3015.
55C to +125C
5.7V to 4.2V
Military Version
DC Electrical Characteristics
V
EE
= 4.2V to 5.7V, V
CC
= V
CCA
= GND, T
C
= 55C to +125C
Symbol
Parameter
V
OH
Output HIGH Voltage 1025
1085
V
OL
Output LOW Voltage
1830 1620
1830 1555
V
OHC
Output HIGH Voltage 1035
1085
V
OLC
Output LOW Voltage
Min
Max
870
870
Units
mV
mV
mV
mV
mV
mV
mV
mV
mV
T
C
Conditions
Notes
0C to +125C
55C
0C to +125C
55C
0C to +125C
55C
0C to +125C
55C
55C to +125C
(Notes 3, 4, 5)
V
IN
=V
IH (Max)
or V
IL (Min)
Loading with
50
to 2.0V
(Notes 3, 4, 5)
V
IN
=V
IH (Max)
or V
IL (Min)
Loading with
50
to 2.0V
1610
1555
870
V
IH
Input HIGH Voltage
1165
Guaranteed HIGH Signal
for All Inputs
Guaranteed LOW Signal
for All Inputs
V
EE
= 4.2V
V
IN
= V
IL (Min)
V
EE
= 5.7V
V
IN
= V
IH (Max)
Inputs Open
(Notes 3, 4, 5,
6)
V
IL
Input HIGH Voltage
1830 1475
mV
55C to +125C
(Notes 3, 4, 5,
6)
I
IL
Input LOW Current
0.50
μA
55C to +125
(Notes 3, 4, 5)
I
IH
Input HIGH Current
240
340
25
μA
μA
mA
0C to +125C
55C
55C to +125C
(Notes 3, 4, 5)
I
EE
Power Supply
Current
70
(Notes 3, 4, 5)
Note 3:
F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals 55C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4:
Screen tested 100% on each device at 55C, +25C, and +125C, Subgroups 1, 2, 3, 7, and 8.
Note 5:
Sample tested (Method 5005, Table I) on each manufactured lot at 55C, +25C, and +125C, Subgroups A1, 2, 3, 7, and 8.
Note 6:
Guaranteed by applying specified input condition and testing V
OH
/V
OL
.
AC Electrical Characteristics
V
EE
= 4.2V to 5.7V, V
CC
= V
CCA
= GND
Symbol
Parameter
T
C
= 55C
Min
0.30
T
C
= +25C
Min
0.40
T
C
= +125C
Min
0.40
Units
Conditions
Notes
Max
1.80
Max
1.60
Max
1.80
t
PLH
t
PHL
t
TLH
t
THL
Propagation Delay
Data to Output
Transition Time
20% to 80%, 80% to
20%
ns
(Notes 7, 8,
9, 11)
Figures 1, 2
0.30
1.20
0.30
1.20
0.30
1.20
ns
(Note 10)
Note 7:
F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals 55C), then testing immediately
after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 8:
Screen tested 100% on each device at +25C, only Subgroup A9.
Note 9:
Sample tested (Method 5005, Table I) on each manufactured lot at +25C, Subgroup A9, and at +125C and 55C temperatures, Subgroups A10 and A11.
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| F100322FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Nine Bit Buffer |
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| F100322FMQR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Nine Bit Buffer |
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