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| 型號(hào)： | EVAL-AD5232SDZ |
| 廠商： | Analog Devices Inc |
| 文件頁(yè)數(shù)： | 20/24頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | BOARD EVAL FOR AD5232 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 主要目的： | 數(shù)字電位器 |
| 已用 IC / 零件： | AD5232 |
| 主要屬性： | 2 通道，256 位置 |
| 次要屬性： | SPI 接口 |
| 已供物品： | 板，CD |
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Data Sheet
AD5232
Rev. C | Page 5 of 24
INTERFACE TIMING CHARACTERISTICS
All input control voltages are specified with tR = tF = 2.5 ns (10% to 90% of 3 V) and are timed from a voltage level of 1.5 V. Switching
characteristics are measured using both VDD = 3 V and VDD = 5 V.
Table 2.
Parameter1, 2
Symbol
Conditions
Min
Typ3
Max
Unit
Clock Cycle Time (tCYC)
t1
20
ns
CS Setup Time
t2
10
ns
CLK Shutdown Time to CS Rise
t3
1
tCYC
Input Clock Pulse Width
t4, t5
Clock level high or low
10
ns
Data Setup Time
t6
From positive CLK transition
5
ns
Data Hold Time
t7
From positive CLK transition
5
ns
CS to SDO-SPI Line Acquire
t8
40
ns
CS to SDO-SPI Line Release
t9
50
ns
CLK to SDO Propagation Delay4
t10
RP = 2.2 k, CL < 20 pF
50
ns
CLK to SDO Data Hold Time
t11
RP = 2.2 k, CL < 20 pF
0
ns
CS High Pulse Width5
t12
10
ns
CS High to CS High5
t13
4
tCYC
RDY Rise to CS Fall
t14
0
ns
CS Rise to RDY Fall Time
t15
0.15
0.3
ms
Store/Read EEMEM Time6
t16
Applies to Command Instruction 2, Command
Instruction 3, and Command Instruction 9
25
ms
CS Rise to Clock Rise/Fall Setup
t17
10
ns
Preset Pulse Width (Asynchronous)
tPRW
Not shown in timing diagram
50
ns
Preset Response Time to RDY High
tPRESP
PR pulsed low to refresh wiper positions
70
s
1
Guaranteed by design; not subject to production test.
2
See the Timing Diagrams section for the location of measured values.
3
Typicals represent average readings at 25°C and VDD = 5 V.
4
Propagation delay depends on the value of VDD, RPULL-UP, and CL.
5
Valid for commands that do not activate the RDY pin.
6
RDY pin low only for Command Instruction 2, Command Instruction 3, Command Instruction 8, Command Instruction 9, Command Instruction 10, and the PR hardware pulse:
CMD_8 ~ 1 ms, CMD_9 = CMD_10 ~ 0.12 ms, and CMD_2 = CMD_3 ~ 20 ms. Device operation at TA = 40°C and VDD < 3 V extends the save time to 35 ms.
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