參數(shù)資料
型號(hào)： ESH1PBHE384A
廠商： Vishay Intertechnology,Inc.
英文描述： Vishay General Semiconductor
中文描述： 威世通用半導(dǎo)體
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 101K
代理商： ESH1PBHE384A
www.vishay.com
2
Document Number: 88895
Revision: 25-Jun-07
Vishay General Semiconductor
ESH1PB, ESH1PC & ESH1PD
New Product
Note:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. R
θ
JL
is measured
at the terminal of cathode band. R
θ
JC
is measured at the top centre of the body
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Maximum reverse recovery time
at I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
at I
F
= 1.0 A, V
R
= 30 V di/dt = 50 A/μs, I
rr
= 10 % I
RM
T
j
= 25 °C
at I
F
= 1.0 A, V
R
= 30 V di/dt = 50 A/μs, I
rr
= 10 % I
RM
T
j
= 100 °C
t
rr
25
ns
Typical reverse recovery time
t
rr
25
35
ns
Typical reverse recovery time
at I
F
= 1.0 A, V
R
= 30 V di/dt = 50 A/μs, I
rr
= 10 % I
RM
T
j
= 25 °C
at I
F
= 1.0 A, V
R
= 30 V di/dt = 50 A/μs, I
rr
= 10 % I
RM
T
j
= 100 °C
at 4.0 V, 1 MHz
Q
rr
10
15
nC
Typical junction capacitance
C
J
25
pF
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ESH1PB
ESH1PC
ESH1PD
UNIT
Typical thermal resistance
(1)
R
θ
JA
R
θ
JL
R
θ
JC
105
15
20
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ESH1PB-E3/84A
0.024
84A
3000
7" Diameter Plastic Tape & Reel
ESH1PB-E3/85A
ESH1PBHE3/84A
(1)
ESH1PBHE3/85A
(1)
0.024
85A
10000
13" Diameter Plastic Tape & Reel
0.024
84A
3000
7" Diameter Plastic Tape & Reel
0.024
85A
10000
13" Diameter Plastic Tape & Reel
Figure 1. Forward Current Derating Curve
0
1.2
95
105
115
125
135
145
155
165
0.
8
1.0
0.2
0.4
0.6
175
T
L
meas
u
red
at the cathode
b
and terminal
Lead Temperat
u
re (°C)
A
v
e
w
a
u
r
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
10
20
30
0
40
50
Nu
m
b
er of Cycles at 50 Hz
P
w
a
u
r
u
r
相關(guān)PDF資料
PDF描述
ESH1PBHE385A Vishay General Semiconductor
ESH1PC Vishay General Semiconductor
ESH1PD Vishay General Semiconductor
ESH2B Surface Mount Ultrafast Plastic Rectifiers
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ESH1PBHE385A 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Vishay General Semiconductor
ESH1PBHM3/84A 功能描述:整流器 100volts 1.0amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ESH1PBHM3/85A 功能描述:整流器 100volts 1.0amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
ESH1PBHM3-84A 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Ultrafast Rectifiers
ESH1PBHM3-85A 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Ultrafast Rectifiers
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