參數(shù)資料
型號: ESH1PB-E385A
廠商: Vishay Intertechnology,Inc.
英文描述: Vishay General Semiconductor
中文描述: 威世通用半導(dǎo)體
文件頁數(shù): 3/4頁
文件大?。?/td> 101K
代理商: ESH1PB-E385A
Document Number: 88895
Revision: 25-Jun-07
www.vishay.com
3
ESH1PB, ESH1PC & ESH1PD
Vishay General Semiconductor
New Product
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
0.4
0.6
0.
8
1.2
1.4
0.1
10
1
100
0.01
1.0
0.2
1.6
T
j
= 150 °C
T
j
= 125 °C
T
j
= 175 °C
T
j
= 25 °C
Instantaneo
u
s For
w
ard
V
oltage (
V
)
I
u
s
w
a
u
r
20
Percent of Rated Peak Re
v
erse
V
oltage (
%
)
40
60
8
0
100
0.1
1
10
100
10
30
50
70
90
0.01
1000
T
j
= 150 °C
T
j
= 125 °C
T
j
= 175 °C
T
j
= 25 °C
I
u
s
v
e
u
r
μ
A
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal impedance
0.1
10
1
100
1
100
10
1000
Re
v
erse
V
oltage (
V
)
J
u
n
0.01
10
1
100
1
10
100
0.1
1000
t - P
u
lse D
u
ration (s)
T
W
)
0.000 (0.00)
0.012 (0.30)
0.013 (0.35)
0.004 (0.10)
0.01
8
(0.45)
0.006 (0.15)
0.045 (1.15)
0.033 (0.
8
5)
0.036 (0.91)
0.024 (0.61)
0.016 (0.40)
0.032 (0.
8
0)
0.053 (1.35)
0.041 (1.05)
0.012 (0.30) REF
0.105
(2.67)
0.025
(0.635)
0.100
(2.54)
0.030
(0.762)
0.050
(1.27)
Cathode
b
and
0.142 (3.61)
0.126 (3.19)
0.15
8
(4.00)
0.146 (3.70)
0.0
8
6 (2.1
8
)
0.074 (1.
88
)
0.0
8
7 (2.20)
0.103 (2.60)
DO-220AA (SMP)
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