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參數(shù)資料
| 型號(hào)： | ER1B |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | ER1B |
PAGE . 2
STAD-FEB.20.2004
RATING AND CHARACTERISTIC CURVES
FIG.2 MAXIMUM AVERAGE FORWARD CURRENT DERATING
LEAD TEMPERATURE, C
O
A
C
0
0
0.5
1.0
1.5
20
40
60
80
100
120
140
160
180
SINGLE PHASE, HALF-WAVE, 60Hz RESISTIVE
OR INDUCTIVE LOAD P.C.B MOUNTED
ON 0.3 x 0.3" (8.0 x 8.0 mm)COPPER PAD AREAS
FIG.1 TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, VOLTS
C
FIG.4 TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE VOLTS
I
A
FIG.3 TYPICAL REVERSE CHARACTERISTICS
PERCENT OF RATED PEAK INVERSE VOLTGE, VOLTS
I
M
NUMBER OF CYCLES AT 60Hz
F
(
FIG.5 MAXIMUM NON-REPEITIVE SURGE CURRENT
40 60 80 100
1
2
4
6
8 10
20
5
20
15
10
30
25
35
1000
100
10
1.0
0.1
20
40
60
80
100
120
T = 75 C
O
T = 25 C
O
T = 125 C
O
0.1
1
10
100
T= 25 C
f= 1.0MHz
Vsig= 50mVp-p
O
12
0
2.0
4.0
6.0
8.0
10
14
16
18
1.0
.1
.01
.001
0.4
0.6
0.8
1.0
1.2
1
1
1
.
.
.
4
6
8
T = 25 C
O
10
600V
300-400V
50-200V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ER1G | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AA |
| ER1Y | 1 A, 1600 V, SILICON, SIGNAL DIODE, DO-215AA |
| ER3B | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| ER3C | 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AB |
| ER3J | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ER1B_R1_00001 | 制造商:PanJit Touch Screens 功能描述: |
| ER1B_R2_00001 | 制造商:PanJit Touch Screens 功能描述: |
| ER1B1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3 AMP ENCAPSULATED ASSEMBLIES |
| ER1BA | 制造商:CHENDA 制造商全稱:Chendahang Electronics Co., Ltd 功能描述:SURFACE MOUNT SUPER FAST RECTIFIER |
| ER1BB | 制造商:LUGUANG 制造商全稱:Shenzhen Luguang Electronic Technology Co., Ltd 功能描述:Surface Mount Rectifiers |
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