參數(shù)資料
型號(hào): EN29LV160B-90T
廠商: Eon Silicon Solution Inc.
英文描述: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 16兆位(2048K × 8位/ 1024K x 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁(yè)數(shù): 22/45頁(yè)
文件大小: 438K
代理商: EN29LV160B-90T
This Data Sheet may be revised by subsequent versions
2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
29
EN29LV160
Rev. A, Issue Date: 2004/03/30
AC CHARACTERISTICS
Word / Byte Configuration (Byte#)
Speed
Unit
Std
Parameter
Description
-70
-90
tBCS
Byte# to CE# switching setup time
Min
0
ns
tCBH
CE# to Byte# switching hold time
Min
0
ns
tRBH
RY/BY# to Byte# switching hold time
Min
0
ns
Byte timings for Read Operations
Byte timings for Write Operations
Note: Switching BYTE# pin not allowed during embedded operations
tBCS
CE
OE
Byte
CE
WE
tCBH
tBCS
Byte
tRBH
RY/BY
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