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| 型號(hào)： | EN29LV160B-90BP |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| 中文描述： | 16兆位（2048K × 8位/ 1024K x 16位）閃存引導(dǎo)扇區(qū)閃存，CMOS 3.0伏，只 |
| 文件頁(yè)數(shù)： | 27/45頁(yè) |
| 文件大小： | 438K |
| 代理商： | EN29LV160B-90BP |
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This Data Sheet may be revised by subsequent versions
2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
33
EN29LV160
Rev. A, Issue Date: 2004/03/30
Table 15. ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
0.5
10
sec
Chip Erase Time
17.5
sec
Excludes 00H programming prior
to erasure
Byte Programming Time
8
300
s
Word Programming Time
8
300
s
Byte
16.8
50.4
Chip Programming
Time
Word
8.4
25.2
sec
Excludes system level overhead
Erase/Program Endurance
100K
cycles
Minimum 100K cycles
Table 16. LATCH UP CHARACTERISTICS
Parameter Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins
(including A9, Reset and OE )
-1.0 V
12.0 V
Input voltage with respect to Vss on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 17. 48-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Table 18. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Minimum Pattern Data Retention Time
125°C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV160B-90B | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV160B-90TIP | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV160B-90TI | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV160B-90TP | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
| EN29LV160B-90T | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV160BB-70BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash 制造商:Eon Silicon Solution Inc 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash |
| EN29LV160BT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash |
| EN29LV160CB-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:FLASH, 3V Read Program Erase 16 Megabit (2M x 8 / 1M x 16) 70ns TSOP |
| EN29LV320AT-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV320A Series, 32 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash |
| EN29LV320B-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:32 Megabit, CMOS, 3V, Boot Sector Flash Memory, TSOP-48 |
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