參數(shù)資料
型號(hào)： EN27LV020B-150
廠商： Electronic Theatre Controls, Inc.
英文描述： 2Megabit Low Voltage EPROM (256K x 8)
中文描述： 2Megabit低電壓存儲(chǔ)器（256K × 8）
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 96K
代理商： EN27LV020B-150
4800 Great America Parkway Ste 202
Santa Clara, CA. 95054
Tel: 408-235-8680
Fax: 408-235-8685
Preliminary
5
EN27LV020 / EN27LV020B
READ MODE
The EN27LV020 / EN27LV020B has two control functions, both of which must be logically
satisfied in order to obtain data at the outputs. Chip Enable (CE) is the power control and
should be used for device selection. Output Enable (OE) is the output control and should be
used to gate data to the output pins, independent of device selection. Assuming that
addresses are stable, address access time (t
ACC
) is equal to the delay from CE to output
(t
CE
). Data is available at the outputs (t
OE
) after the falling edge of OE, assuming the CE
has been LOW and addresses have been stable for at least t
ACC
- t
OE
.
STANDBY MODE
The EN27LV020 / EN27LV020B has CMOS standby mode which reduces the maximum V
CC
current to 10
μ
A. It is placed in CMOS standby when CE is at V
CC
±
0.3 V. The EN27LV020
/ EN27LV020B also has a TTL-standby mode which reduces the maximum V
CC
current to 0.6
mA. It is placed in TTL-standby when CE is at V
IH
. When in standby mode, the outputs are
in a high-impedance state, independent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two-line control function is provided to
allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not occur.
It is recommended that CE be decoded and used as the primary device-selection function,
while OE be made a common connection to all devices in the array and connected to the
READ line from the system control bus. This assures that all deselected memory devices are in
their low-power standby mode and that the output pins are only active when data is desired
from a particular memory device.
SYSTEM CONSIDERATIONS
During the switch between active and standby conditions, transient current peaks are produced
on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks
is dependent on the output capacitance loading of the device. At a minimum, a 0.1
μ
F ceramic
capacitor (high frequency, low inherent inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition, to overcome the voltage drop caused
by the inductive effects of the printed circuit board traces on EPROM arrays, a 4.7
μ
F bulk
electrolytic capacitor should be used between V
CC
and V
SS
for each eight devices. The location
of the capacitor should be close to where the power supply is connected to the array.
相關(guān)PDF資料
PDF描述
EN27LV020B-200 2Megabit Low Voltage EPROM (256K x 8)
EN27LV020B-90 2Megabit Low Voltage EPROM (256K x 8)
EN29LV040A 4 Megabit (512K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EP300 EP300 PowerPC Bus Arbiter
EPA025A-70 High Efficiency Heterojunction Power FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EN27LV020B-200 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Megabit Low Voltage EPROM (256K x 8)
EN27LV020B-90 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2Megabit Low Voltage EPROM (256K x 8)
EN2828 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:800V/25A Switching Regulator Applications
EN2981C 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:30V, 700mA Rectifier
EN2997K60803A6 功能描述:環(huán)形MIL規(guī)格連接器 983 3C 3#20 Pin Plug RoHS:否 制造商:Amphenol MIL 類(lèi)型:MIL-DTL-5015 系列:97 產(chǎn)品類(lèi)型:Receptacles 外殼大小:28 外殼類(lèi)型:Potting 觸點(diǎn)類(lèi)型:Socket (Female) 位置/觸點(diǎn)數(shù)量:14 插入安排:28-2 觸點(diǎn)材料:Copper Alloy 觸點(diǎn)電鍍:Silver 安裝角:Straight 安裝風(fēng)格:Wire 端接類(lèi)型:Solder 電流額定值:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*