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參數(shù)資料
| 型號： | EMIF02-600FU7RL |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 數(shù)據(jù)傳輸濾波器 |
| 英文描述： | 1 FUNCTIONS, FERRITE CHIP |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 135K |
| 代理商： | EMIF02-600FU7RL |
Please note that the EMIF02-600FU7 is not only acting for positive ESD surges but also for negative ones. For these kind
of disturbances it clamps close to ground voltage as shown in Fig. A5b.
NOTE: DYNAMIC RESISTANCE MEASUREMENT
As the value of the dynamic resistance remains stable for a
surge duration lower than 20
s, the 2.5s rectangular surge
is well adapted. In addition both rise and fall times are
optimized to avoid any parasitic phenomenon during the
measurement of Rd.
CROSSTALK BEHAVIOR
1- Crosstalk phenomena
The crosstalk phenomena are due to the coupling between 2 lines. The coupling factor (
β12 or β21 ) increases when the
gap across lines decreases, particularly in silicon dice. In the example above the expected signal on load RL2 is
α2VG2,in
fact the real voltage at this point has got an extra value
β21VG1. This part of the VG1 signal represents the effect of the
crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to be taken into account when the drivers impose
fast digital data or high frequency analog signals in the disturbing line. The perturbed line will be more affected if it works
with low voltage signal or high load impedance (few k
). The following chapters give the value of both digital and analog
crosstalk.
Fig A5 : Remaining voltage at both stages S1 (Vin) and S2 (Vout) during ESD surge
a) Positive surge
b) Negative surge
Fig A6 : Rd measurement current wave
2.5
s
2
s
tt
I
IPP
2.5
s duration measurement wave
Fig A7 : Crosstalk phenomena
line 1
line 2
α
β
α
β
VG1
VG2
RG1
RG2
RL1
RL2
DRIVERS
RECEIVERS
VG1
VG2
VG1
EMIF02-600FU7
5/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EMIF02-600FU7 | 1 FUNCTIONS, FERRITE CHIP |
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| EMK11G2H-27.665MTR | CRYSTAL OSCILLATOR, CLOCK, 27.665 MHz, LVCMOS OUTPUT |
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