參數資料
型號: EMIF01-10005W5
廠商: STMICROELECTRONICS
元件分類: 數據傳輸濾波器
英文描述: 1 FUNCTIONS, FERRITE CHIP
封裝: SOT-323, 5 PIN
文件頁數: 5/10頁
文件大?。?/td> 159K
代理商: EMIF01-10005W5
ESD PROTECTION
In addition to its filtering function, the EMIF01-10005W5 is particularly optimized to perform ESD protection.
ESD protection is based on the use of device which clamps at :
VCL = VBR + Rd.IPP
This protection function is splitted in 2 stages. As shown in figure A3, the ESD strikes are clamped by the first stage S1 and
then its remaining overvoltage is applied to the second stage through the resistor R. Such a configuration makes the output
voltage very low at the Vout level.
To have a good approximation of the remaining voltages at both Vin and Vout stages, we provide the typical dynamical
resistance value Rd. By taking into account these following hypothesis : R>>Rd, RG>>Rd and Rload>>Rd, it gives these
formulas:
Vin
=
Rg.Vbr
+Rd.Vg
Rg
Vout
=
R.Vbr
+Rd.Vin
R
The results of the calculation done for VG=8kV, RG=330 (IEC1000-4-2 standard) and VBR=7V (typ.) give:
Vin = 31.2 V
Vout = 7.3 V
This confirms the very low remaining voltage across the device to be protected. It is also important to note that in this
approximation the parasitic inductance effect was not taken into account. This could be few tenths of volts during few ns at
the Vin side. This parasitic effect is not present at the Vout side due the low current involved after the resistance R.
Fig A3 : ESD clamping behavior
ESD
Surge
Vin
Vout
Rload
S1
S2
Rg
R
Rd
Vbr
Vg
Device to be protected
EMIF01-10005W5
Fig A4 : Measurement conditions
TEST BOARD
ESD
SURGE
EMIF01
16kV
Air
Discharge
Vin
Vout
EMIF01-10005W5
4/10
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