- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384295 > EM48AM3284LBA-75FE (Electronic Theatre Controls, Inc.) 512Mb (4M】4Bank】32) Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | EM48AM3284LBA-75FE |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512Mb (4M】4Bank】32) Synchronous DRAM |
| 中文描述： | 的512Mb（4分】4Bank】32）同步DRAM |
| 文件頁數(shù)： | 8/17頁 |
| 文件大?。?/td> | 231K |
| 代理商： | EM48AM3284LBA-75FE |
eorex
EM48AM3284LBA
Jul. 2006
www.eorex.com
8/17
AC Operating Test Characteristics (Continued)
(V
DD
=1.8V
±
0.1V, T
A
=0°C ~70°C)
-75
Symbol
Parameter
Min.
Max.
Units
t
RC
ACTIVE to ACTIVE Command
Period
(Note 6)
ACTIVE to PRECHARGE
Command Period
(Note 6)
PRECHARGE to ACTIVE
Command Period
(Note 6)
ACTIVE to READ/WRITE Delay
Time
(Note 6)
ACTIVE(one) to ACTIVE(another)
Command
(Note 6)
READ/WRITE Command to
READ/WRITE Command
90
ns
t
RAS
60
120k
ns
t
RP
22.5
ns
t
RCD
30
ns
t
RRD
2
CLK
t
CCD
1
CLK
t
DPL
Date-in to PRECHARGE
Command
Date-in to BURST Stop Command
Data-out to High
Impedance from
PRECHARGE Command
Refresh Time (8,192 cycle)
* All voltages referenced to V
SS
.
Note 6:
These parameters account for the number of clock cycles and depend on the operating frequency
of the clock, as follows:
The number of clock cycles = Specified value of timing/clock period (Count Fractions as a whole
number)
2
CLK
t
BDL
1
CLK
CL=3
2CK+22.5
t
ROH
CL=2
2CK+22.5
ns
t
REF
64
ms
Recommended Power On and Initialization
The following power on and initialization sequence guarantees the device is preconditioned to each user’s
specific needs. (Like a conventional DRAM) During power on, all V
DD
and V
DDQ
pins must be built up
simultaneously to the specified voltage when the input signals are held in the “NOP” state. The power on
voltage must not exceed V
DD
+0.3V on any of the input pins or V
DD
supplies. (CLK signal started at same
time)
After power on, an initial pause of 200 μs is required followed by a precharge of all banks using the
precharge command.
To prevent data contention on the DQ bus during power on, it is required that the DQM and CKE pins be
held high during the initial pause period. Once all banks have been precharged, the Mode Register Set
Command must be issued to initialize the Mode Register. A minimum of eight Auto Refresh cycles (CBR)
are also required, and these may be done before or after programming the Mode Register.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EM512D16 | 512K x 16 bit Ultra-Low Power Asynchronous Static RAM |
| EM6011 | ELECTRET CONDENSER MICROPHONE |
| EM6011-BC | ELECTRET CONDENSER MICROPHONE |
| EM6011P-BC | ELECTRET CONDENSER MICROPHONE |
| EM6011S-BC | ELECTRET CONDENSER MICROPHONE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EM48AM3284LBA-75FH | 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M×4Bank×32) Synchronous DRAM |
| EM48AM3284LBA-75FS | 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M×4Bank×32) Synchronous DRAM |
| EM48AM3284LBA-7FE | 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M】4Bank】32) Synchronous DRAM |
| EM48AM3284LBA-8FE | 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M】4Bank】32) Synchronous DRAM |
| EM48AM3284LBB | 制造商:EOREX 制造商全稱:EOREX 功能描述:512Mb (4M??4Bank??32) Mobile Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。