參數(shù)資料
型號： EL7563CM-T13
英文描述： Monolithic 4 Amp DC:DC Step-down Regulator
中文描述： 單片4安培直流：DC降壓穩(wěn)壓器
文件頁數(shù)： 11/18頁
文件大?。?/td> 1241K
代理商： EL7563CM-T13
2
EL7563C
Monolithic 4 Amp DC:DC Step-down Regulator
E
L
75
63
C
Absolute Maximum Ratings (T
A = 25°C)
Supply Voltage between VIN or VDD and GND
+4.5V
VLX Voltage
VIN +0.3V
Input Voltage
GND -0.3V, VDD +0.3V
VHI Voltage
GND -0.3V, VLX +6V
Storage Temperature
-65°C to +150°C
Operating Ambient Temperature
-40°C to +85°C
Operating Junction Temperature
+135°C
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA.
DC Characteristics
VDD = VIN = 3.3V, TA = TJ = 25°C, COSC = 1.2nF, unless otherwise specified.
Parameter
Description
Conditions
Min
Typ
Max
Unit
VREF
Reference Accuracy
1.24
1.26
1.28
V
VREFTC
Reference Temperature Coefficient
50
ppm/°C
VREFLOAD
Reference Load Regulation
0<IREF<50A
-1
%
VRAMP
Oscillator Ramp Amplitude
1.15
V
IOSC_CHG
Oscillator Charge Current
0.1V<VOSC<1.25V
200
A
IOSC_DIS
Oscillator Discharge Current
0.1V<VOSC<1.25V
8
mA
IVDD+VDRV
VDD+VDRV Supply Current
VEN = 4V, FOSC = 120kHz
2
3.5
5
mA
IVDD_OFF
VDD Standby Current
EN = 0
1
1.5
mA
VDD_OFF
VDD for Shutdown
2.4
2.65
V
VDD_ON
VDD for Startup
2.6
2.95
V
TOT
Over Temperature Threshold
135
°C
THYS
Over Temperature Hysteresis
20
°C
ILEAK
Internal FET Leakage Current
EN = 0, LX = 3.3V (low FET), LX = 0V
(high FET)
10
A
ILMAX
Peak Current Limit
5
A
RDSON
FET On Resistance
Wafer level test only
30
60
m
RDSONTC
RDSON Tempco
0.2
m
/°C
ISTP
Auxilliary Supply Tracking Positive Input Pull
Down Current
VSTP = VIN/2
-4
2.5
A
ISTN
Auxilliary Supply Tracking Negative Input Pull
Up Current
VSTN = VIN/2
2.5
4
A
VPGP
Positive Power Good Threshold
With respect to target output voltage
8
16
%
VPGN
Negative Power Good Threshold
With respect to target output voltage
-16
-8
%
VPG_HI
Power Good Drive High
IPG = 1mA
2.7
V
VPG_LO
Power Good Drive Low
IPG = -1mA
0.5
V
VOVP
Over Voltage Protection
10
%
VFB
Output Initial Accuracy
ILOAD = 0A
0.977
0.992
1.007
V
VFB_LINE
Output Line Regulation
VIN = 3.3V, VIN = 10%, ILOAD = 0A
0.5
%
VFB_LOAD
Output Load Regulation
0.5A< ILOAD <4A
0.5
%
VFB_TC
Output Temperature Stability
-40°C < TA<85°C, ILOAD = 2A
±1
%
IFB
Feedback Input Pull Up Current
VFB = 0V
100
200
nA
VEN_HI
EN Input High Level
2.7
V
VEN_LO
EN Input Low Level
1
V
IEN
Enable Pull Up Current
VEN = 0
-4
-2.5
A
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