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參數(shù)資料
| 型號： | EFA480C-SOT89 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DC-4GHz Low Distortion GaAs Power FET |
| 中文描述： | 的DC - 4GHz的低失真GaAs功率場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 290K |
| 代理商： | EFA480C-SOT89 |
*
6
'
6285&(
Excelics
EFA480C-SOT89
DATA SHEET
DC-4GHz Low Distortion GaAs Power FET
Features
LOW COST SURFACE-MOUNT PLASTIC PACKAGE
+34.0dBm TYPICAL OUTPUT POWER
12.0dB TYPICAL POWER GAIN AT 2GHz
0.8dB TYPICAL NOISE FIGURE AT 2GHz
+48dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT
POINT AT 2GHz
0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
Si
3
N
4
PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Applications
Analog and Digital Wireless System
HPA
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS
PARAMETERS/TEST CONDITIONS
Output Power at 1dB Compression f = 2GHz
Vds=7V, Ids=750mA
Gain at 1dB Compression f = 2GHz
Vds=7V, Ids=750mA
Power Added Efficiency at 1dB Compression
Vds=7V, Ids=750mA f = 2GHz
Noise Figure f = 2GHz
Vds=5V, Ids=300mA
Vds=5-7V, Ids=750mA
Output 3rd Order Intercept Point f = 2GHz
Vds=5-7V, Ids=750mA
Vds=5V, Ids=300mA
MIN
32.5
TYP
34.0
12.0
MAX
UNIT
P
1dB
dBm
G
1dB
10.0
dB
PAE
45
0.8
2.0
48
39
%
NF
dB
IP3
dBm
Idss
Saturated Drain Current Vds=3V, Vgs=0V
880
1360
1760
mA
Gm
Transconductance Vds=3V, Vgs=0V
560
720
mS
Vp
Pinch-off Voltage Vds=3V, Ids=14mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-11
-15
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-7
-14
V
Rth
Thermal Resistance
* Overall Rth depends on case mounting
.
14*
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE
1
12V
-8V
Idss
120mA
32dBm
175
o
C
-65/175
o
C
10 W
CONTINUOUS
2
7V
-4V
1.2A
20mA
@ 3dB Compression
150
o
C
-65/150
o
C
8.4 W
(Top View)
All Dimensions In Mils
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