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參數(shù)資料
| 型號： | EF1A |
| 廠商： | Comchip Technology Co., Ltd. |
| 英文描述： | Efficient Fast Recovery Rectifier |
| 中文描述： | 高效快速恢復整流器 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 82K |
| 代理商： | EF1A |
Rating and Characteristic Curves (
EF1A
Thru EF
1J
)
www.comchip.com.tw
COMCHIP
Forward current ( A )
Forward Voltage (V)
Fig.2 - Forward Characteristics
MDS0312011A
Page 2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Peak Surge Forward Current ( A )
Fig. 4 - Non Repetitive Forward
Surge Current
Number of Cycles at 60Hz
Efficient Fast Recovery Rectifier
Fig. 6 - Current Derating Curve
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
D.U.T.
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
0
10
20
50
40
30
1 5 10 50 100
10
1.0
0.1
0.01
0.001
Single Phase
Half Wave 60Hz
0 15 30 45 60 75 90 105 120 135 150
100
10
1.0
0.1
0. 01
Percent of Rated Peak Reverse Voltage (%)
Reverse Current ( uA )
Fig. 1 - Reverse Characteristics
Tj=25 C
Tj=125 C
Tj=25 C
Pulse width 300uS
4% duty cycle
Tj=25 C
Average Forward Current ( A )
Ambient Temperature ( C)
0 25 50 75 100 125 150 175
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
8.3mS Single Half Sine
Wave JEDEC methode
Tj=75 C
0.01 0.1 1.0 10 100
Fig. 3 - Junction Capacitance
Reverse Voltage (V)
Junction Capacitance (pF)
EF1
A
-
EF1D
EF1J
EF1G
35
30
25
20
15
10
5
0
f=1MHz and applied
4VDC reverse voltage
Tj=25 C
EF1A-EF1D
EF1G-EF1J
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