參數(shù)資料
型號(hào): EDL1216BASA-75
英文描述: Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 12-DFN T&R
中文描述: 內(nèi)存| 4X2MX16 |的CMOS | BGA封裝| 54PIN |塑料
文件頁數(shù): 4/59頁
文件大?。?/td> 489K
代理商: EDL1216BASA-75
EDL1216AASA
Data Sheet E0196E20 (Ver. 2.0)
12
Auto refresh command (/CS, /RAS, /CAS = Low, /WE, CKE = High)
This command is a request to begin the Auto refresh operation. The refresh address is generated internally.
Before executing Auto refresh, all banks must be precharged.
After this cycle, all banks will be in the idle
(precharged) state and ready for a row activate command. During tRC1 period (from refresh command to refresh or
activate command), the Mobile RAM cannot accept any other command
Add
A10
BA0(A13), BA1(A12)
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Auto refresh command
Self refresh entry command (/CS, /RAS, /CAS, CKE = Low, /WE = High)
After the command execution, self refresh operation continues while CKE remains low. When CKE goes high, the
Mobile RAM exits the self refresh mode.
During self refresh mode, refresh interval and refresh operation are
performed internally, so there is no need for external control. Before executing self refresh, all banks must be
precharged.
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
BA0(A13), BA1(A12)
Self refresh entry command
Power down entry command (/CS, CKE = Low, /RAS, /CAS, /WE = High)
After the command execution, power down mode continues while CKE remains low. When CKE goes high, the
Mobile RAM exits the power down mode. Before executing power down, all banks must be precharged.
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
BA0(A13), BA1(A12)
Power down entry command
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