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參數(shù)資料
| 型號： | EDI9LC644V-BC |
| 英文描述： | Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 12-DFN T&R |
| 中文描述： | 的SSRAM / SDRAM的MCP的 |
| 文件頁數(shù)： | 14/25頁 |
| 文件大?。?/td> | 1551K |
| 代理商： | EDI9LC644V-BC |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI9LC644V
FIG. 14 SDRAM WRITE INTERRUPTED BY PRECHARGE COMMAND & WRITE BURST
STOP @ BURST LENGTH = FULL PAGE
NOTES:
1. At full page mode, burst is end at the end of burst. So auto precharge is possible.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by AC parameter of tRDL.
BWE at write interrupt by precharge command is needed to prevent invalid write.
BWE should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge
cycle will be masked internally.
3. Burst stop is valid at every burst length.
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