參數(shù)資料
型號(hào): EDI88130CS
英文描述: 128Kx8 Monolithic SRAM(128Kx8 CMOS單片靜態(tài)RAM)
中文描述: 128Kx8單片的SRAM(128Kx8的CMOS單片靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 255K
代理商: EDI88130CS
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
EDI88130CS
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Low Power Version only
Data Retention Voltage
VDD
VDD = 2.0V
2
V
Data Retention Quiescent Current
ICCDR
CS1
≥ VDD -0.2V and/or CS2 ≥ VSS +0.2V
0.5
2
mA
Chip Disable to Data Retention Time (1)
TCDR
VIN
≥ VDD -0.2V
0
ns
Operation Recovery Time (1)
TR
or VIN
≤ 0.2V
TAVAV*–
ns
NOTE:
1. Parameter guaranteed by design, but not tested.
* Read Cycle Time
DATA RETENTION CHARACTERISTICS (EDI88130LPS ONLY)
(TA = -55
°C to +125°C)
WS32K32-XHX
FIG. 5
DATA RETENTION - CS1 CONTROLLED
DATA RETENTION, CS2 CONTROLLED
Data Retention Mode
tR
Vcc
CS2
tCDR
CS2
≤ 0.2V
VDD
4.5V
WS32K32-XHX
FIG. 6
DATA RETENTION - CS2 CONTROLLED
DATA RETENTION, CS2 CONTROLLED
Data Retention Mode
tR
Vcc
CS2
tCDR
CS2
≤ 0.2V
VDD
4.5V
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