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參數(shù)資料
| 型號： | EDI816256LPA20M44I |
| 英文描述： | 1GHz Current Feedback Amplifier with Enable; Temperature Range: -40°C to 85°C; Package: 8-SOIC |
| 中文描述： | x16的SRAM |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 107K |
| 代理商： | EDI816256LPA20M44I |
1
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
HI-RELIABILITY PRODUCT
EDI816256CA-RP
256Kx16 PLASTIC MONOLITHIC SRAM
FEATURES
s 256Kx16 bit CMOS Static
s Random Access Memory
Access Times of 15, 17, 20, 25ns
Data Retention Function (LPA version)
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
s Center Power/Ground Pins (Revolutionary)
s 44 lead JEDEC Approved Revolutionary Pinout
Plastic SOJ Package
s Single +5V (
±10%) Supply Operation
PIN CONFIGURATION
TOP VIEW
May 1999 Rev. 3
PIN DESCRIPTION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A0
A1
A2
A3
A4
CS
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7
A8
A9
A17
A16
A15
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0-17
Address Inputs
LB
Lower-Byte Control (I/O1-8)
UB
Upper-Byte Control (I/O9-16)
I/O1-16
Data Input/Output
CS
Chip Select
OE
Output Enable
WE
Write Enable
VCC
+5.0V Power
VSS
Ground
NC
No Connection
The EDI816256CA is a ruggedized plastic 256Kx16 SRAM that
allows the user to capitalize on the cost advantage of using a
plastic component while not sacrificing all of the reliability
available in a full military device.
The EDI816256CA uses 16 common input and output lines and has
an output enable pin which operates faster than address access
time at read cycle. The device allows upper and lower byte access
by use of the data byte control pins (LB, UB).
Extended temperature testing is performed with the test patterns
developed for use on WEDC’s fully compliant 256Kx16 SRAMs.
WEDC fully characterizes devices to determine the proper test
patterns for testing at temperature extremes. This is critical
because the operating characteristics of device change when it is
operated beyond the commercial guarantee a device that oper-
ates reliably in the field at temperature extremes. Users of
WEDC’s ruggedized plastic benefit from WEDC’s extensive expe-
rience in characterizing SRAMs for use in military systems.
WEDC ensures Low Power devices will retain data in Data Reten-
tion mode by characterizing the devices to determine the appro-
priate test conditions. This is crucial for systems operating at -
40
°Corbelowandusingdensememoriessuchas256Kx16s.WEDC’s
ruggedized plastic SOJ is footprint compatible with WEDC’s full
military ceramic 44 pin SOJ.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDI816256LPA20M44M | 1GHz Current Feedback Amplifier with Enable; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R |
| EDI816256LPA25M44I | 1GHz Current Feedback Amplifier with Enable; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R |
| EDI816256LPA25M44M | 1GHz Current Feedback Amplifier with Enable; Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R |
| EDI816256CA | 256Kx16 Monolithic SRAM(CMOS，256Kx16單片靜態(tài)RAM) |
| EDI84256CS25LB | 1GHz Current Feedback Amplifier with Enable; Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDI816256LPA20M44M | 制造商:Microsemi Corporation 功能描述:256K X 16 SRAM MONOLITHIC, 5V, LOW POWER, 20NS, 44 SOJ (PLAS - Bulk |
| EDI816256LPA20N44B | 制造商:Microsemi Corporation 功能描述:256K X 16 SRAM MONOLITHIC, 5V, LOW POWER, 20NS, 44 CSOJ, TIN - Bulk |
| EDI816256LPA25F44B | 制造商:Microsemi Corporation 功能描述:256K X 16 SRAM MONOLITHIC, 5V, LOW POWER, 25NS, 44 FLATPACK, - Bulk |
| EDI816256LPA25M44I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| EDI816256LPA25M44M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
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