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參數(shù)資料
| 型號： | EBD51RC4AKFA-7B-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | JT 55C 55#22D PIN PLUG |
| 中文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | LEAD FREE, DIMM-184 |
| 文件頁數(shù)： | 11/19頁 |
| 文件大?。?/td> | 198K |
| 代理商： | EBD51RC4AKFA-7B-E |
EBD51RC4AKFA
Data Sheet E0377E20 (Ver. 2.0)
11
DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
IDD0
-6B
-7A, -7B
-6B
-7A, -7B
2190
2010
2640
2370
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,
CL = 3.5, tRC = tRC (min.)
1, 2, 9
Operating current
(ACTV-READ-PRE)
IDD1
mA
1, 2, 5
Idle power down standby current IDD2P
444
mA
CKE
≤
VIL
4
Floating idle standby current
IDD2F
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
840
750
750
714
750
714
1380
1290
3450
3090
3630
3270
3450
3360
mA
CKE
≥
VIH, /CS
≥
VIH,
DQ, DQS, DM = VREF
CKE
≥
VIH, /CS
≥
VIH,
DQ, DQS, DM = VREF
4, 5
Quiet idle standby current
IDD2Q
mA
4, 10
Active power down standby
current
IDD3P
mA
CKE
≤
VIL
3
Active standby current
IDD3N
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 3.5
CKE
≥
VIH, BL = 2,
CL = 3.5
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
mA
1, 2, 5, 6
IDD4W
mA
1, 2, 5, 6
Auto refresh current
IDD5
mA
Self refresh current
IDD6
444
mA
Operating current
(4 banks interleaving)
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. DQ, DM and DQS transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at
≥
VIH or
≤
VIL.
IDD7A
-6B
-7A, -7B
6150
5250
mA
BL = 4
1, 5, 6, 7
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
(DDR SDRAM component Specification)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–2
2
μA
VDD
≥
VIN
≥
VSS
Output leakage current
ILO
–5
5
μA
VDDQ
≥
VOUT
≥
VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
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| EBD51RC4AKFA-E | Circular Connector; No. of Contacts:55; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-35 RoHS Compliant: No |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| EBD51RC4AKFA-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM (64M words x 72 bits, 1 Rank) |
| EBD51RD8ABFA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM |
| EBD51RD8ABFA-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM |
| EBD51RD8ABFA-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM |
| EBD51RD8ABFA-7B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Registered DDR SDRAM DIMM |
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