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參數(shù)資料
| 型號： | EBD11UD8ADDA-7B-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 1GB DDR SDRAM SO-DIMM (128M words x64 bits, 2 Ranks) |
| 中文描述： | 128M X 64 DDR DRAM MODULE, 0.75 ns, ZMA200 |
| 封裝： | LEAD FREE, SODIMM-200 |
| 文件頁數(shù)： | 11/19頁 |
| 文件大小： | 208K |
| 代理商： | EBD11UD8ADDA-7B-E |
EBD11UD8ABFB
Preliminary Data Sheet E0296E20 (Ver. 2.0)
11
DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
IDD0
-6B
-7A, -7B
1760
1560
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,
CL = 2.5,
tRC = tRC (min.)
CKE
≤
VIL
1, 2, 9
Operating current
(ACTV-READ-PRE)
IDD1
-6B
-7A, -7B
2000
1760
mA
1, 2, 5
Idle power down standby current
IDD2P
48
mA
4
Floating idle standby current
IDD2F
-6B
-7A, -7B
640
560
mA
≥
VIH, /CS
≥
VIH,
CKE
≥
VIH, /CS
≥
VIH,
CKE
Quiet idle standby current
IDD2Q
400
mA
Active power down
standby current
IDD3P
320
mA
CKE
≤
VIL
3
Active standby current
IDD3N
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
1120
960
2240
1920
2240
1920
4640
4320
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 2.5
CKE
≥
VIH, BL = 2,
CL = 2.5
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
mA
1, 2, 5, 6
IDD4W
mA
1, 2, 5, 6
Auto refresh current
IDD5
mA
Self refresh current
IDD6
64
mA
Operating current
(4 banks interleaving)
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at
≥
VIH or
≤
VIL.
IDD7A
-6B
-7A, -7B
4000
3440
mA
BL = 4
5, 6, 7
DC Characteristics 2 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–32
32
μA
VDD
≥
VIN
≥
VSS
Output leakage current
ILO
–10
10
μA
VDD
≥
VOUT
≥
VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
Pin Capacitance (TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V)
Parameter
Symbol
Pins
max.
Unit
Notes
Input capacitance
CI1
Address, /RAS, /CAS, /WE,
/CS, CKE
CK, /CK
TBD
pF
Input capacitance
CI2
TBD
pF
Data and DQS input/output
capacitance
CO
DQ, DQS
TBD
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EBD11UD8ADDA-E | 1GB DDR SDRAM SO-DIMM (128M words x64 bits, 2 Ranks) |
| EBD11UD8ADFB | 1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks) |
| EBD11UD8ADFB-5 | 1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks) |
| EBD11UD8ADFB-5B | 1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks) |
| EBD11UD8ADFB-5C | 1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EBD11UD8ADDA-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB DDR SDRAM SO-DIMM (128M words x64 bits, 2 Ranks) |
| EBD11UD8ADFB | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks) |
| EBD11UD8ADFB-5 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks) |
| EBD11UD8ADFB-5B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks) |
| EBD11UD8ADFB-5C | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1GB Unbuffered DDR SDRAM DIMM (128M words x64 bits, 2 Ranks) |
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