元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
SIZ920DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S DUAL PWRPAIR | 96 | 1:$1.98000 25:$1.53080 100:$1.38920 250:$1.24740 500:$1.07730 1,000:$0.90720 |
SIZ920DT-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V D-S DUAL PWRPAIR | 0 | 3,000:$0.76545 6,000:$0.73710 15,000:$0.70875 30,000:$0.69458 75,000:$0.68040 |
SI4992EY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 75V 8-SOIC | 304 | 1:$1.59000 25:$1.25720 100:$1.13130 250:$0.98464 500:$0.87990 1,000:$0.69135 |
SI4992EY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 75V 8-SOIC | 304 | 1:$1.59000 25:$1.25720 100:$1.13130 250:$0.98464 500:$0.87990 1,000:$0.69135 |
SI4992EY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 75V 8-SOIC | 0 | |
SI5504BDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 738 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
SI5504BDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 738 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
SI5504BDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 0 | 3,000:$0.40600 6,000:$0.38570 15,000:$0.36975 30,000:$0.35960 75,000:$0.34800 |
SI4210DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 200 | 1:$0.77000 25:$0.59520 100:$0.52500 250:$0.45500 500:$0.38500 1,000:$0.30625 |
SI4210DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 200 | 1:$0.77000 25:$0.59520 100:$0.52500 250:$0.45500 500:$0.38500 1,000:$0.30625 |
SI4210DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.25375 5,000:$0.23625 12,500:$0.22750 25,000:$0.21875 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | 2 N 溝道(半橋) |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 40A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 7.1 毫歐 @ 18.9A,10V |
Id 時的 Vgs(th)(最大): | 2.5V @ 250µA |
閘電荷(Qg) @ Vgs: | 35nC @ 10V |
輸入電容 (Ciss) @ Vds: | 1260pF @ 15V |
功率 - 最大: | 39W,100W |
安裝類型: | 表面貼裝 |
封裝/外殼: | 6-PowerPair? |
供應(yīng)商設(shè)備封裝: | 6-PowerPair? |
包裝: | 剪切帶 (CT) |