| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI5504BDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 738 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
| SI5504BDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 1206-8 | 0 | 3,000:$0.40600 6,000:$0.38570 15,000:$0.36975 30,000:$0.35960 75,000:$0.34800 |
| SI4210DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 200 | 1:$0.77000 25:$0.59520 100:$0.52500 250:$0.45500 500:$0.38500 1,000:$0.30625 |
| SI4210DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 200 | 1:$0.77000 25:$0.59520 100:$0.52500 250:$0.45500 500:$0.38500 1,000:$0.30625 |
| SI4210DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.25375 5,000:$0.23625 12,500:$0.22750 25,000:$0.21875 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | N 和 P 溝道 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 4A，3.7A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 65 毫歐 @ 3.1A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 7nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 220pF @ 15V |
| 功率 - 最大: | 3.12W，3.1W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-SMD，扁平引線 |
| 供應(yīng)商設(shè)備封裝: | 1206-8 ChipFET? |
| 包裝: | 剪切帶 (CT) |