分離式半導(dǎo)體產(chǎn)品 BSC032NE2LS品牌、價格、PDF參數(shù)

BSC032NE2LS • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
BSC032NE2LS Infineon Technologies MOSFET N-CH 25V 22A TDSON-8 9,992 1:$1.53000
10:$1.37100
25:$1.20960
100:$1.08860
250:$0.94752
500:$0.84672
1,000:$0.66528
2,500:$0.62496
BSC032NE2LS Infineon Technologies MOSFET N-CH 25V 22A TDSON-8 5,000 5,000:$0.53626
10,000:$0.51408
25,000:$0.49997
50,000:$0.48384
IPD088N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO252-3 2,500 2,500:$0.52906
5,000:$0.50261
12,500:$0.48182
25,000:$0.46860
62,500:$0.45348
BSZ0904NSI Infineon Technologies MOSFET N-CH 30V 40A TSDSON 5,000 5,000:$0.52735
10,000:$0.50554
25,000:$0.49166
50,000:$0.47580
BSC032NE2LS • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 25V
電流 - 連續(xù)漏極(Id) @ 25° C: 84A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 3.2 毫歐 @ 30A，10V
Id 時的 Vgs(th)（最大）: 2V @ 250µA
閘電荷(Qg) @ Vgs: 16nC @ 10V
輸入電容 (Ciss) @ Vds: 1200pF @ 12V
功率 - 最大: 37W
安裝類型: 表面貼裝
封裝/外殼: 8-PowerTDFN
供應(yīng)商設(shè)備封裝: PG-TDSON-8
包裝: 剪切帶 (CT)