| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSS131 H6327 | Infineon Technologies | MOSFET N-CH 240V 110mA SOT23 | 6,000 | 3,000:$0.10620 6,000:$0.10030 15,000:$0.09145 30,000:$0.08555 75,000:$0.07670 150,000:$0.07375 |
| BSS316N H6327 | Infineon Technologies | MOSFET N-CH 30V 1.4A SOT23 | 8,305 | 1:$0.62000 10:$0.44500 25:$0.35160 100:$0.26700 250:$0.18912 500:$0.15130 1,000:$0.11570 |
| BSS316N H6327 | Infineon Technologies | MOSFET N-CH 30V 1.4A SOT23 | 6,000 | 3,000:$0.08900 6,000:$0.08010 15,000:$0.07120 30,000:$0.06675 75,000:$0.05919 150,000:$0.05563 |
| BSS314PE H6327 | Infineon Technologies | MOSFET P-CH 30V 1.5A SOT23 | 5,960 | 1:$0.52000 10:$0.37000 25:$0.30560 100:$0.24650 250:$0.17748 500:$0.14298 1,000:$0.11093 |
| BSS314PE H6327 | Infineon Technologies | MOSFET P-CH 30V 1.5A SOT23 | 5,960 | 1:$0.52000 10:$0.37000 25:$0.30560 100:$0.24650 250:$0.17748 500:$0.14298 1,000:$0.11093 |
| BSS314PE H6327 | Infineon Technologies | MOSFET P-CH 30V 1.5A SOT23 | 3,000 | 3,000:$0.08874 6,000:$0.08381 15,000:$0.07642 30,000:$0.07149 75,000:$0.06409 150,000:$0.06163 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 240V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 110mA |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 14 歐姆 @ 100mA，10V |
| Id 時的 Vgs(th)（最大）: | 1.8V @ 56µA |
| 閘電荷(Qg) @ Vgs: | 3.1nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 77pF @ 25V |
| 功率 - 最大: | 360mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應商設備封裝: | PG-SOT23-3 |
| 包裝: | 帶卷 (TR) |