| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BSP125 L6433 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | 11,060 | 1:$1.09000 10:$0.97800 25:$0.86320 100:$0.77680 250:$0.67608 500:$0.60418 1,000:$0.47471 |
| IPD60R3K3C6 | Infineon Technologies | MOSFET N-CH 600V 1.7A TO252-3 | 4,213 | 1:$0.73000 10:$0.63300 25:$0.56680 100:$0.50010 250:$0.43344 500:$0.36674 1,000:$0.29173 |
| IPD60R3K3C6 | Infineon Technologies | MOSFET N-CH 600V 1.7A TO252-3 | 2,500 | 2,500:$0.24172 5,000:$0.22505 12,500:$0.21671 25,000:$0.20838 62,500:$0.20504 125,000:$0.20004 |
| BSS159N H6906 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT23 | 3,000 | 3,000:$0.23505 6,000:$0.21884 15,000:$0.21073 30,000:$0.20263 75,000:$0.19938 150,000:$0.19452 |
| BSP320S L6433 | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | 7,975 | 1:$0.71000 10:$0.61000 25:$0.54600 100:$0.48180 250:$0.41756 500:$0.35332 1,000:$0.28105 |
| BSP320S L6433 | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | 4,000 | 4,000:$0.23287 8,000:$0.21681 12,000:$0.20878 28,000:$0.20075 100,000:$0.19272 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 120mA |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 45 歐姆 @ 120mA，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.3V @ 94µA |
| 閘電荷(Qg) @ Vgs: | 6.6nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 150pF @ 25V |
| 功率 - 最大: | 1.8W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-261-4，TO-261AA |
| 供應(yīng)商設(shè)備封裝: | PG-SOT223-4 |
| 包裝: | Digi-Reel® |