| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSB028N06NN3 G | Infineon Technologies | MOSFET N-CH 60V 22A WDSON-2 | 9,875 | 1:$3.37000 10:$2.88700 25:$2.59840 100:$2.35790 250:$2.11728 500:$1.82856 1,000:$1.53984 2,500:$1.39548 |
| IPB65R310CFD | Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | 1,940 | 1:$4.38000 10:$3.94500 25:$3.58000 100:$3.21460 250:$2.92240 500:$2.55710 |
| IPB65R310CFD | Infineon Technologies | MOSFET N-CH 650V 11.4A TO263 | 1,940 | 1:$4.38000 10:$3.94500 25:$3.58000 100:$3.21460 250:$2.92240 500:$2.55710 |
| IPB021N06N3 G | Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 | 1,799 | 1:$4.19000 10:$3.77400 25:$3.42440 100:$3.07490 250:$2.79540 500:$2.44598 |
| IPP076N12N3 G | Infineon Technologies | MOSFET N-CH 120V 100A TO220-3 | 461 | 1:$3.06000 10:$2.73600 25:$2.46200 100:$2.24330 250:$2.02444 500:$1.81654 1,000:$1.53202 2,500:$1.45542 5,000:$1.39523 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 90A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2.8 毫歐 @ 30A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 102µA |
| 閘電荷(Qg) @ Vgs: | 143nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 12000pF @ 30V |
| 功率 - 最大: | 78W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 3-WDSON |
| 供應(yīng)商設(shè)備封裝: | MG-WDSON-2，CanPAK M? |
| 包裝: | Digi-Reel® |