| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SIS407DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1212-8 PPAK | 855 | 1:$1.10000 25:$0.87000 100:$0.78300 250:$0.68152 500:$0.60900 1,000:$0.47850 |
| SIHP5N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 5.3A TO220AB | 46 | 1:$1.49000 25:$1.17800 100:$1.06030 250:$0.92284 500:$0.82468 |
| SI7421DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V PPAK 1212-8 | 0 | 3,000:$0.58800 |
| SIS892ADN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S PPAK 1212 | 100 | 1:$1.18000 25:$0.93000 100:$0.83700 250:$0.72852 500:$0.65100 1,000:$0.51150 |
| SIS892ADN-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S PPAK 1212 | 0 | 3,000:$0.43400 6,000:$0.41230 15,000:$0.39525 30,000:$0.38440 75,000:$0.37200 |
| SIJ800DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V PPAK SO-8L | 0 | 3,000:$0.43400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 25A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 9.5 毫歐 @ 15.3A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 93.8nC @ 8V |
| 輸入電容 (Ciss) @ Vds: | 2760pF @ 10V |
| 功率 - 最大: | 33W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? 1212-8 |
| 包裝: | 剪切帶 (CT) |