| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI7392DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V PPAK 8SOIC | 0 | 3,000:$0.75600 |
| SI1488DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 6.1A SC70-6 | 0 | 3,000:$0.20925 |
| SI1405BDH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 0 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SI1405BDH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 0 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SIRA02DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 50A SO-8 | 0 | 1:$2.00000 25:$1.53920 100:$1.39650 250:$1.25400 500:$1.08300 1,000:$0.91200 |
| SI1405BDH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 0 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| 2N7002-E3 | Vishay Siliconix | MOSFET N-CH 60V 115MA SOT23 | 0 | 1,000:$0.20400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 9A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 9.75 毫歐 @ 15A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 15nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.8W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? SO-8 |
| 包裝: | 帶卷 (TR) |