分離式半導(dǎo)體產(chǎn)品 BUZ31 H品牌、價(jià)格、PDF參數(shù)

BUZ31 H • 品牌、價(jià)格
元器件型號 廠商 描述 數(shù)量 價(jià)格
BUZ31 H Infineon Technologies MOSFET N-CH 200V 14.5A TO220-3 0 500:$1.07012
BSC018NE2LSI Infineon Technologies MOSFET N-CH 25V 29A TDSON-8 5,000 1:$2.27000
10:$1.94200
25:$1.74760
100:$1.58590
250:$1.42408
500:$1.22988
1,000:$1.03568
2,500:$0.93858
BSC018NE2LSI Infineon Technologies MOSFET N-CH 25V 29A TDSON-8 5,000 1:$2.27000
10:$1.94200
25:$1.74760
100:$1.58590
250:$1.42408
500:$1.22988
1,000:$1.03568
2,500:$0.93858
BSC018NE2LSI Infineon Technologies MOSFET N-CH 25V 29A TDSON-8 5,000 5,000:$0.84149
10,000:$0.80913
25,000:$0.79294
50,000:$0.77676
IPB054N06N3 G Infineon Technologies MOSFET N-CH 60V 80A TO263-3 2,000 1:$1.99000
10:$1.70900
25:$1.53840
100:$1.39600
250:$1.25356
500:$1.08262
IPB054N06N3 G Infineon Technologies MOSFET N-CH 60V 80A TO263-3 2,000 1,000:$0.82621
2,000:$0.76923
5,000:$0.74074
10,000:$0.71225
25,000:$0.69801
50,000:$0.68376
BUZ31 H • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點(diǎn): 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 200V
電流 - 連續(xù)漏極(Id) @ 25° C: 14.5A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 200 毫歐 @ 9A，5V
Id 時(shí)的 Vgs(th)（最大）: 4V @ 1mA
閘電荷(Qg) @ Vgs: -
輸入電容 (Ciss) @ Vds: 1120pF @ 25V
功率 - 最大: 95W
安裝類型: 通孔
封裝/外殼: TO-220-3
供應(yīng)商設(shè)備封裝: PG-TO220-3
包裝: 管件