| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 1:$2.27000 10:$1.94200 25:$1.74760 100:$1.58590 250:$1.42408 500:$1.22988 1,000:$1.03568 2,500:$0.93858 |
| BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 1:$2.27000 10:$1.94200 25:$1.74760 100:$1.58590 250:$1.42408 500:$1.22988 1,000:$1.03568 2,500:$0.93858 |
| BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 5,000:$0.84149 10,000:$0.80913 25,000:$0.79294 50,000:$0.77676 |
| IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1:$1.99000 10:$1.70900 25:$1.53840 100:$1.39600 250:$1.25356 500:$1.08262 |
| IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1,000:$0.82621 2,000:$0.76923 5,000:$0.74074 10,000:$0.71225 25,000:$0.69801 50,000:$0.68376 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 100A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.8 毫歐 @ 30A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 36nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2500pF @ 12V |
| 功率 - 最大: | 69W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應(yīng)商設(shè)備封裝: | PG-TDSON-8 |
| 包裝: | Digi-Reel® |