參數(shù)資料
型號: DSPIC30F6014T-20E/PF
廠商: Microchip Technology
文件頁數(shù): 44/66頁
文件大?。?/td> 0K
描述: IC DSPIC MCU/DSP 144K 80TQFP
產(chǎn)品培訓(xùn)模塊: Asynchronous Stimulus
標(biāo)準(zhǔn)包裝: 1,000
系列: dsPIC™ 30F
核心處理器: dsPIC
芯體尺寸: 16-位
速度: 20 MIPS
連通性: CAN,I²C,SPI,UART/USART
外圍設(shè)備: AC'97,欠壓檢測/復(fù)位,I²S,LVD,POR,PWM,WDT
輸入/輸出數(shù): 68
程序存儲器容量: 144KB(48K x 24)
程序存儲器類型: 閃存
EEPROM 大小: 4K x 8
RAM 容量: 8K x 8
電壓 - 電源 (Vcc/Vdd): 2.5 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 16x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 80-TQFP
包裝: 帶卷 (TR)
配用: DM300024-ND - KIT DEMO DSPICDEM 1.1
DM300004-2-ND - BOARD DEMO DSPICDEM.NET 2
DM300004-1-ND - BOARD DEMO DSPICDEM.NET 1
AC164314-ND - MODULE SKT FOR PM3 80PF
其它名稱: DSPIC30F6014T20EP
2010 Microchip Technology Inc.
DS70102K-page 49
dsPIC30F Flash Programming Specification
11.10 Reading Code Memory
Reading from code memory is performed by executing
a series of TBLRD instructions and clocking out the data
using the REGOUT command. To ensure efficient
execution and facilitate verification on the programmer,
four instruction words are read from the device at a
time.
Table 11-10 shows the ICSP programming details for
reading code memory. In Step 1, the Reset vector is
exited. In Step 2, the 24-bit starting source address for
reading is loaded into the TBLPAG and W6 registers.
The upper byte of the starting source address is stored
to TBLPAG, while the lower 16 bits of the source
address are stored to W6.
To minimize the reading time, the packed instruction
word format that was utilized for writing is also used for
reading (see Figure 11-5). In Step 3, the write pointer
W7 is initialized, and four instruction words are read
from code memory and stored to working registers
W0:W5. In Step 4, the four instruction words are
clocked out of the device from the VISI register using
the REGOUT command. In Step 5, the internal PC is
reset to 0x100, as a precautionary measure, to prevent
the PC from incrementing into unimplemented memory
when large devices are being read. Lastly, in Step 6,
Steps 3-5 are repeated until the desired amount of
code memory is read.
TABLE 11-10: SERIAL INSTRUCTION EXECUTION FOR READING CODE MEMORY
Command
(Binary)
Data
(Hexadecimal)
Description
Step 1: Exit the Reset vector.
0000
040100
000000
GOTO 0x100
NOP
Step 2: Initialize TBLPAG and the read pointer (W6) for TBLRD instruction.
0000
200xx0
880190
2xxxx6
MOV
#<SourceAddress23:16>, W0
MOV
W0, TBLPAG
MOV
#<SourceAddress15:0>, W6
Step 3: Initialize the write pointer (W7) and store the next four locations of code memory to W0:W5.
0000
EB0380
000000
BA1B96
000000
BADBB6
000000
BADBD6
000000
BA1BB6
000000
BA1B96
000000
BADBB6
000000
BADBD6
000000
BA0BB6
000000
CLR
W7
NOP
TBLRDL
[W6], [W7++]
NOP
TBLRDH.B
[W6++], [W7++]
NOP
TBLRDH.B
[++W6], [W7++]
NOP
TBLRDL
[W6++], [W7++]
NOP
TBLRDL
[W6], [W7++]
NOP
TBLRDH.B
[W6++], [W7++]
NOP
TBLRDH.B
[++W6], [W7++]
NOP
TBLRDL
[W6++], [W7]
NOP
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