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DS3911
Temperature-Controlled, Nonvolatile,
I2C Quad DAC
14
Maxim Integrated
bytes, after the last address counter position of FFh
is accessed, the address counter automatically wraps
back to the first location, 00h. Read operations can
continue indefinitely.
I2C LUT Lockout
Both the I2C port and the LUT controller have access to
the LUTs. To prevent bus/data contention, the LUT con-
troller goes into a wait state instead of accessing the LUT
if the I2C port is active. Register updates and memory
access are briefly described below.
Afteravoltageortemperatureconversioncompletes
or the
TINDEX register is calculated, the results are
loaded into a shadow SRAM for the associated regis-
ter by a backdoor that is not seen by the I2C port. The
value is pushed forward to the SRAM cell seen by the
I2C port at a later state. It is not pushed if the I2C port
is active.
After
TINDEX is calculated and loaded into the shad-
ow SRAM, the LUT controller goes into a round-robin
DAC LUT, performs the calculation, and loads the
result into the
DAC VALUE register. This process is
where contention could occur. As such, the state
machine waits until I2C is inactive before performing
this process. If the I2C port were to become active
for a long time period, the temperature compensation
does not run.
Memory Description
The device’s internal memory consists of both volatile
and nonvolatile registers located in Lower Memory and
four separate memory tables (Upper Memory), as shown
The Lower Memory is addressed from 00h–7Fh. Lower
Memory contains temperature reading, VCC reading,
status bits, control registers, table select bits, and all four
The Upper Memory consists of the following four memory
tables. The table select bits, TS[3:0], determine which
table is currently accessible through I2C at memory loca-
tion 80h–FFh.
Table 04h contains a nonvolatile temperature-indexed
hold the pulse-density modulation profile for DAC0.
Table 05h contains a nonvolatile temperature-indexed
hold the pulse-density modulation profile for DAC1.
Table 06h contains a nonvolatile temperature-indexed
hold the pulse-density modulation profile for DAC2.
Table 07h contains a nonvolatile temperature-indexed
hold the pulse-density modulation profile for DAC3.
Shadowed EEPROM
The
DAC POR memory locations are actually shadowed
EEPROM and are controlled by the shadowed EEPROM
bit, SEE. By default, SEE is not set and these locations
act as ordinary EEPROM. By setting SEE these locations
function like SRAM cells, which allow an infinite num-
ber of write cycles without concern of wearing out the
EEPROM. This also eliminates the requirement for the
EEPROM write time, tW. Because changes made with
SEE enabled do not affect the EEPROM, these changes
are not retained through power cycles. The power-on
value is the last value written with SEE disabled. This
function can be used to speed up calibration and mini-
mize the number of EEPROM write cycles.