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參數(shù)資料
| 型號： | DS1855B-100 |
| 元件分類： | 數(shù)字電位計 |
| 英文描述： | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| 中文描述： | 雙非易失數(shù)字電位器及安全存儲器 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大?。?/td> | 252K |
| 代理商： | DS1855B-100 |
DS1855
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NOTES:
1. All voltages are referenced to ground.
2. ISTBY specified with for VCC = 3.0V and 5.0V, and control port logic pins are driven to the appropriate
logic levels. Appropriate logic levels specify that logic inputs are within a 0.5V of ground or VCC for
the corresponding inactive state.
3. I/O pins of fast-mode devices must not obstruct the SDA and SCL lines if VCC is switched off.
4. A fast mode-device can be used in a standard mode system, but the requirement t
SU:DAT > 250ns must
then be met. This will automatically be the case if the device does not stretch the LOW period of the
SCL signal. If such a device does stretch the LOW period of the SCL signal, it must output the next
data bit to the SDA line tRMAX + tSU:DAT = 1000 + 250 = 1250ns before the SCL line is released.
5. After this period, the first clock pulse is generated.
6. The maximum t
HD:DAT has only to be met if the device does not stretch the LOW period (tLOW) of the
SCL signal.
7. CB – Total capacitance of one bus line in picofarads, timing referenced to (0.9)(V
CC) and (0.1)(VCC).
8. EEPROM write begins after a STOP condition occurs.
9. Absolute linearity is used to measure expected wiper voltage as determined by wiper position.
10. Relative linearity is used to determine the change of wiper voltage between two adjacent wiper
positions.
11. ICC specified with SDA pin open.
12. Maximum ICC is dependent on clock rates.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1855E-010 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-020 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-050 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-100 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855X-010 | Dual Nonvolatile Digital Potentiometer and Secure Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1855B-100+ | 功能描述:數(shù)字電位計 IC Dual NV w/Memory RoHS:否 制造商:Maxim Integrated 電阻:200 Ohms 溫度系數(shù):35 PPM / C 容差:25 % POT 數(shù)量:Dual 每 POT 分接頭:256 弧刷存儲器:Volatile 緩沖刷: 數(shù)字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作電源電壓:1.7 V to 5.5 V 電源電流:27 uA 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TQFN-16 封裝:Reel |
| DS1855E-010 | 功能描述:數(shù)字電位計 IC RoHS:否 制造商:Maxim Integrated 電阻:200 Ohms 溫度系數(shù):35 PPM / C 容差:25 % POT 數(shù)量:Dual 每 POT 分接頭:256 弧刷存儲器:Volatile 緩沖刷: 數(shù)字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作電源電壓:1.7 V to 5.5 V 電源電流:27 uA 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TQFN-16 封裝:Reel |
| DS1855E-010/R | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-010/T | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:Dual Nonvolatile Digital Potentiometer and Secure Memory |
| DS1855E-010/T&R | 制造商:Maxim Integrated Products 功能描述:DUAL NV POT & MEM TSSOP T&R 10/10K - Tape and Reel 制造商:Maxim Integrated Products 功能描述:IC RES TEMP-CNTRL 10/10K 14TSSOP |
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