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參數(shù)資料
| 型號： | DS1553WP-120+ |
| 廠商： | Maxim Integrated Products |
| 文件頁數(shù)： | 15/20頁 |
| 文件大小： | 0K |
| 描述： | IC RTC RAM Y2K 3.3V 120NS 34PCM |
| 產(chǎn)品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 40 |
| 類型： | 時鐘/日歷 |
| 特點： | 警報器，閏年，NVSRAM，監(jiān)視計時器，Y2K |
| 存儲容量： | 8KB |
| 時間格式： | HH:MM:SS（24 小時） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | 并聯(lián) |
| 電源電壓： | 2.97 V ~ 3.63 V |
| 電壓 - 電源，電池： | 3V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 34-PowerCap? 模塊 |
| 供應商設備封裝： | 34-PowerCap 模塊 |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁面： | 1434 (CN2011-ZH PDF) |
DS1553 64kB, Nonvolatile, Year-2000-Compliant Timekeeping RAM
4 of 20
Table 1. Operating Modes
VCC
CE
OE
WE
DQ0–DQ7
MODE
POWER
VIH
X
High-Z
Deselect
Standby
VIL
X
VIL
DIN
Write
Active
VIL
VIH
DOUT
Read
Active
VCC > VPF
VIL
VIH
High-Z
Read
Active
VSO < VCC <VPF
X
High-Z
Deselect
CMOS Standby
<VBAT
X
High-Z
Data Retention
Battery Current
DATA READ MODE
The DS1553 is in read mode whenever CE (chip enable) is low and WE (write enable) is high. The
device architecture allows ripple-through access to any valid address location. Valid data is available at
the data input/output (DQ) pins within tAA after the last address input is stable, provided that CE and OE
access times are satisfied. If CE or OE access times are not met, valid data is available at the latter of
chip-enable access (tCEA) or at output-enable access time (tOEA). The state of the DQ pins is controlled by
CE
and OE . If the outputs are activated before tAA, the data lines are driven to an intermediate state until
tAA. If the address inputs are changed while CE and OE remain valid, output data remains valid for
output data hold time (tOH) but will then go indeterminate until the next address access.
DATA WRITE MODE
The DS1553 is in write mode whenever WE and CE are in their active state. The start of a write is
referenced to the latter occurring transition of WE or CE . The addresses must be held valid throughout
the cycle. CE and WE must return inactive for a minimum of tWR prior to the initiation of a subsequent
read or write cycle. Data in must be valid tDS prior to the end of the write and remain valid for tDH
afterward. In a typical application, the OE signal is high during a write cycle. However, OE can be active
provided that care is taken with the data bus to avoid bus contention. If OE is low prior to WE
transitioning low, the data bus can become active with read data defined by the address inputs. A low
transition on WE will then disable the outputs tWEZ after WE goes active.
DATA RETENTION MODE
The 5V device is fully accessible, and data can be written and read only when VCC is greater than VPF.
However, when VCC is below the power-fail point (VPF)—the point at which write protection occurs—the
internal clock registers and SRAM are blocked from any access. When VCC falls below the battery switch
point VSO (battery supply level), device power is switched from the VCC pin to the internal backup lithium
battery. RTC operation and SRAM data are maintained from the battery until VCC is returned to nominal
levels.
The 3.3V device is fully accessible and data can be written and read only when VCC is greater than VPF.
When VCC falls below VPF, access to the device is inhibited. If VPF is less than VSO, the device power is
switched from VCC to the internal backup lithium battery when VCC drops below VPF. If VPF is greater
than VSO, the device power is switched from VCC to the internal backup lithium battery when VCC drops
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| DS1553WP-120+ | 功能描述:實時時鐘 64kB NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1553WP-150 | 功能描述:實時時鐘 64kB NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1553WP-150+ | 功能描述:實時時鐘 64kB NV RAM Timekeeper RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| DS1554 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256K NV Y2KC Timekeeping RAM |
| DS1554-100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256K NV Y2KC Timekeeping RAM |
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