參數(shù)資料
型號(hào): DS1350ABP-70
廠商: DALLAS SEMICONDUCTOR
元件分類: Static RAM
英文描述: 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
封裝: POWERCAP MODULE-34
文件頁數(shù): 12/12頁
文件大小: 228K
代理商: DS1350ABP-70
DS1350Y/AB
9 of 12
9. Each DS1230Y has a built-in switch that disconnects the lithium source until VCC is first applied by
the user. The expected tDR is defined as accumulative time in the absence of VCC starting from the
time power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0
°C to 70°C. For industrial products (IND), this range is -40°C to
+85
°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on VCC.
12. tWR1 and tDH1 are measured from WE going high.
13. tWR2 and tDH2 are measured from CE going high.
14. RST and BW are open drain outputs and cannot source current. External pullup resistors should be
connected to these pins for proper operation. Both pins will sink 10 mA.
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100 pF + 1TTL Gate
Cycle = 200 ns for operating current
Input Pulse Levels: 0 - 3.0V
All voltages are referenced to ground
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1350 TTP - SSS - III
Operating Temperature Range
blank: 0
° to 70°
IND: -40
° to +85°C
Access Speed
70:
70 ns
100:
100 ns
Package Type
P:
34-pin PowerCap Module
VCC Tolerance
AB:
±5%
Y:
±10%
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