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參數(shù)資料
| 型號(hào)： | DS1330ABP-100 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| 封裝： | POWERCAP MODULE-34 |
| 文件頁(yè)數(shù)： | 10/11頁(yè) |
| 文件大?。?/td> | 218K |
| 代理商： | DS1330ABP-100 |
DS1330Y/AB
8 of 11
9. Each DS1330Y has a built-in switch that disconnects the lithium source until VCC is first applied by
the user. The expected tDR is defined as accumulative time in the absence of VCC starting from the
time power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0
°C to 70°C. For industrial products (IND), this range is -40°C to
+85
°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on VCC.
12. tWR1 and tDH1 are measured from WE going high.
13. tWR2 and tDH2 are measured from CE going high.
14. RST and BW are open drain outputs and cannot source current. External pull-up resistors should be
connected to these pins for proper operation. Both pins will sink 10 mA.
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100 pF + 1TTL Gate
Cycle = 200 ns for operating current
Input Pulse Levels: 0 - 3.0V
All voltages are referenced to ground
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1330 TTP - SSS - III
Operating Temperature Range
blank: 0
° to 70°
IND: -40
° to +85°C
Access Speed
70:
70 ns
100:
100 ns
Package Type
P:
34-pin PowerCap Module
VCC Tolerance
AB:
±5%
Y:
±10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1330YP-100 | 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| DS1330ABP-70 | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1330WP-150 | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34 |
| DS1330YP-70 | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1345ABP-70 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1330ABP-100+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1330ABP-100-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330ABP-70 | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1330ABP-70+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1330ABP-70IND | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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