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12-23
Vol. 1
S A LES OFFIC ES : V IS IT OUR WEB S ITE AT
http://w w w.temex.com
SILICON PIN DIODES
Microwave applications
For ultrafast switching, these passivated mesa diodes have a thin I layer (< 10 μm).
ULTRA FA S T S WITCHING S ILICON PIN DIODES
Case
C2a
(1)
typ.
min.
typ.
max
max
typ.
typ.
Cb=
0.18 pF
(2)
Cb=
0.12 pF
(2)
max
EH50033
EH50034
EH50035
EH50036
EH50037
EH50052
EH50053
EH50054
EH50055
EH50056
EH50057
EH50071
EH50072
EH50073
EH50074
EH50075
EH50076
EH50077
EH50101
EH50102
EH50103
EH50104
EH50105
EH50106
EH50107
25
30
35
55
65
30
35
40
50
65
80
35
40
45
50
60
80
100
45
50
60
70
90
110
130
30
30
30
30
30
50
50
50
50
50
50
70
70
70
70
70
70
70
100
100
100
100
100
100
100
0.08
0.12
0.17
0.23
0.40
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.04
0.06
0.08
0.12
0.17
0.23
0.40
0.12
0.17
0.23
0.40
0.60
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
0.60
0.06
0.08
0.12
0.17
0.23
0.40
0.60
1.8
1.5
1.0
0.9
0.7
1.6
1.4
1.1
1.0
0.9
0.7
2.0
1.7
1.6
1.4
1.0
0.9
0.7
1.9
1.7
1.4
1.2
1.0
0.8
0.6
20
20
25
30
40
30
30
35
40
50
60
50
50
60
60
100
100
150
150
150
200
250
300
400
500
2.0
2.0
2.5
3.0
4.0
3.0
3.0
4.0
4.0
5.0
6.0
5.0
5.0
6.0
6.0
10.0
10.0
15.0
15.0
15.0
20.0
25.0
30.0
40.0
50.0
DH50033
DH50034
DH50035
DH50036
DH50037
DH50052
DH50053
DH50054
DH50055
DH50056
DH50057
DH50071
DH50072
DH50073
DH50074
DH50075
DH50076
DH50077
DH50101
DH50102
DH50103
DH50104
DH50105
DH50106
DH50107
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
F27d
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
M208
80
80
70
60
50
80
70
60
50
45
45
70
70
60
50
45
40
40
60
60
55
50
40
35
35
Type
μm
V
pF
ns
ns
Type
Standard cases (1)
°C/W
Test
I
R
= 10 μA
V
R
= 6 V
f= 1 MHz
I
F
= 10 mA I
F
= 10
M
A I
F
= 20 mA
f = 120 MHz I
R
= 6 mA V
R
= 10 V
Pdiss
1 W
F 27 d
conditions
50
Characteristics Gold
Breakdown
at 25°C
J unction
capacitance
Series
resistance
Minority
carrier
lifetime
τ
I
Reverse
switching
time
Thermal
resistance
dia
voltage
V
BR
Cj
R
SF
T
CR
Rth
Electrical characteristics
Description
(1)
(2)
Custom cases available on request
C
T
= C
j
+ C
b
Temperature ranges:
Operating J unction (Tj) : -55° C to +175° C
Storage
: -65° C to +200° C
CHIP DIODES
CHIP AND PACKAGED DIODES
PACKAGED DIODES