參數(shù)資料
型號(hào)： DCP69A-13
廠商： DIODES INC
元件分類： 小信號(hào)晶體管
中文描述： 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： GREEN, PLASTIC PACKAGE-4
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 179K
代理商： DCP69A-13
DCP69A/-16
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DCP68)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD -202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
2
3
4
1
4
3
2
1
C
B
E
3
1
2,4
BASE
COLLECTOR
EMITTER
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-1.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation @ TA = 25C (Note 3)
Pd
1
W
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)
RθJA
125
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
V(BR)CES
-25
—
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-20
—
V
IC = -1.0mA, IB = 0
Collector-Base Breakdown Voltage
V(BR)CBO
-25
—
V
IC = -10μA, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
—
V
IE = -10μA, IC = 0
Collector-Base Cutoff Current
ICBO
—
-100
nA
VCB = -25V, IE = 0
Emitter-Base Cutoff Current
IEBO
—
-10
μA
VEB = -5.0V, IC = 0
ON CHARACTERISTICS
(Note 4)
IC = -5.0mA, VCE = -10V
IC = -500mA, VCE = -1.0V
IC = -1.0A,
VCE = -1.0V
DCP69A, DCP69A-16
50
85
40
—
375
—
DC Current Gain
DCP69A-16
hFE
100
—
250
—
IC = -500mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
—
-0.5
V
IC = -1.0A,
IB = -100mA
—
-0.6
—
IC = -5mA, VCE = 10V
Base-Emitter Turn-On Voltage
VBE (ON)
—
-1.0
V
IC = -1.0A, VCE = -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
—
250
—
MHz
IC = -100mA, VCE = -5.0V
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle < 2%.
DS31102 Rev. 6 - 3
1 of 4
www.diodes.com
DCP69A/-16
Diodes Incorporated
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DCP69A-16 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR
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DCP-6EC 制造商:Farnell / Duratool 功能描述:DURTL PLR I/SPRING 6" COMBI 制造商:UNBRANDED 功能描述:PLR I/SPRING 6" COMBI
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