參數(shù)資料
型號: DAN2222E
廠商: 江蘇長電科技股份有限公司
元件分類: 參考電壓二極管
英文描述: SWITCHING DIODE
中文描述: 開關(guān)二極管
文件頁數(shù): 1/3頁
文件大?。?/td> 304K
代理商: DAN2222E
-
WBFBP-03A
unit: mm
TOP
+ +
-
BACK
+ +
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Diode
DAN222E
SWITCHING DIODE
DESCRIPTION
Epitaxial planar Silicon diode
FEATURES
:
High speed. (trr=1.5ns Typ.)
Suitable for high packing density layout
High reliability.
APPLICATION
Ultra high speed switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: N
-
N
+ +
Maximum Ratings and Electrical Characteristics, Single Diode
@T
A
=25
Parameter
Symbol
Limits
Unit
V
V
mA
mA
mW
Peak reverse voltage
V
RM
80
DC reverse voltage
V
R
80
Maximum (peak) forward current
I
FM
300
Average forward current
I
O
100
Power dissipation
P
D
150
Junction temperature
T
j
150
Storage temperature
T
stg
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
I
R
= 100
μ
A
V
R
=70V
80
V
μA
Reverse voltage leakage current
0.1
Forward voltage
V
F
I
F
=100mA
1.2
V
Diode capacitance
C
D
t
rr
V
R
=6V, f=1MHz
V
R
=6V, I
F
=5mA
3.5
pF
ns
Reverse recovery time
4
2. ANODE
3.CATHODE
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