參數(shù)資料
型號: D758N08T
廠商: INFINEON TECHNOLOGIES AG
元件分類: 整流器
英文描述: 760 A, 800 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 1/8頁
文件大?。?/td> 193K
代理商: D758N08T
N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
D758N
MA2-BE, 08.09.1994, R.Jrke
A 40/94
1/8
Seite/page
Kenndaten
Elektrische Eigenschaften
Thermische Eigenschaften
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Tvj = -40°C... Tvj max
VRRM
400
600
800
V
1)
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
IFRMSM
1195 A
Dauergrenzstrom
average on-state current
TC = 115 °C
IFAVM
760 A
Stostrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
IFSM
10300
8800
A
Grenzlastintegral
It-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
It
530,45
387,2
10As
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
Tvj = Tvj max , iF = 2,3 kA
Tvj = Tvj max , iF = 750 A
vF
max.
1,45
0,97
V
Schleusenspannung
threshold voltage
Tvj = Tvj max
V(TO)
0,7 V
Ersatzwiderstand
slope resistance
Tvj = Tvj max
rT
0,31 m
Durchlakennlinie
200 A ≤ iF ≤ 4000 A
on-state characteristic
F
i
D
)
1
i
(
ln
C
i
B
A
v
+
+
+
=
Tvj = Tvj max
A=
B=
C=
D=
4,891E-01
1,323E-04
2,391E-03
1,340E-02
Sperrstrom
reverse current
Tvj = Tvj max , vR = VRRM
iR
max.
20 mA
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
Kühlflche / cooling surface
beidseitig / two-sided, θ = 180°sin
beidseitig / two-sided, DC
Anode / anode, θ = 180°sin
Anode / anode, DC
Kathode / cathode, θ = 180°sin
Kathode / cathode, DC
RthJC
max.
0,067
0,063
0,104
0,100
0,174
0,170
°C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
Kühlflche / cooling surface
beidseitig / two-sided
einseitig / single-sided
RthCH
max.
0,015
0,030
°C/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
Tvj max
180 °C
Betriebstemperatur
operating temperature
Tc op
-40...+150 °C
Lagertemperatur
storage temperature
Tstg
-40...+150 °C
1) 800V auf Anfrage / ask for 800V devices
prepared by: H.Sandmann
date of publication:
2007-10-22
approved by: J.Przybilla
revision:
1
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