參數(shù)資料
型號(hào): CY62146V
英文描述: Memory
中文描述: 內(nèi)存
文件頁數(shù): 7/10頁
文件大?。?/td> 153K
代理商: CY62146V
CY62147V18 MoBL2
7
Notes:
14. Data I/O is high-impedance if OE = V
.
15. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
16. During this period, the I/Os are in output state and input signals should not be applied.
Switching Waveforms
(continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
WC
DATA I/O
ADDRESS
CE
WE
OE
t
HZOE
DATA
IN
VALID
NOTE
Write Cycle No. 1 (WE Controlled)
[9, 14, 15]
16
BHE/BLE
t
BW
t
WC
t
AW
t
SA
t
HA
t
HD
t
SD
t
SCE
WE
DATA I/O
ADDRESS
CE
DATA
IN
VALID
Write Cycle No. 2 (CE Controlled)
[8, 14, 15]
BHE/BLE
t
BW
t
PWE
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