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參數資料
| 型號： | CY25BAH-8F-T13 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | D-Subminiature Connector; Gender:Female; Number of Contacts:80; Contact Termination:IDC; Body Material:Steel; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:PC Board; Peak Reflow Compatible (260 C):No |
| 中文描述： | N溝道IGBT的頻閃閃光的 |
| 文件頁數： | 3/5頁 |
| 文件大?。?/td> | 177K |
| 代理商： | CY25BAH-8F-T13 |
CY25BAH-8F
Rev.1.00, Aug.20.2004, page 3 of 4
Application Example
C
M
+
–
4
Xe Tube
Drive Circuit
Control Signal
GE
R
G(off)
68
R
G(on)
10
V
CM
V
GG
3
2
1
5
6
7
8
V
CM
I
CP
C
M
V
GE
330 V
130 A
300
μ
F
2.85 V
Recommended Operation
Conditions
Maximum Operation
Conditions
350 V
150 A
400
μ
F
2.5 V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 25 mA. (In general, when R
G (off)
= 68
, it is
satisfied.)
3. The ground of the drive signal must be connected to pin 7 only. If the emitter terminal pins 5 and 6 in which a large
currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents
since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured 5,000 shots under the charge current (I
Xe
≤
150 A : full luminescence
condition) of main capacitor (C
M
= 400
μ
F) which can endure repeated discharge of 5,000 times. Repetition period
under full luminescence condition is over 3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| CY25BAH-8F-T13#F00 | 制造商:Renesas Electronics Corporation 功能描述:CY25BAH-8F-T13#F00 - Tape and Reel |
| CY25BAH-8F-T13#X2 | 制造商:Renesas Electronics Corporation 功能描述:CY25BAH-8F-T13#X2 - Tape and Reel |
| CY25BAJ-8F | 功能描述:IGBT N-CH 400V 150A 8TSSOP RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| CY25BAJ-8F-T13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Nch IGBT for Strobe Flash |
| CY25CAH-8F | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Nch IGBT for Strobe Flash |
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